Canneaux, T., Mathiot, D., Ponpon, J., & Leroy, Y. (2010). Modeling of phosphorus diffusion in Ge accounting for a cubic dependence of the diffusivity with the electron concentration. Thin Solid Films, 518(9), 2394. https://doi.org/10.1016/j.tsf.2009.09.171
Chicago Style (17th ed.) CitationCanneaux, Thomas, Daniel Mathiot, Jean-Pierre Ponpon, and Yann Leroy. "Modeling of Phosphorus Diffusion in Ge Accounting for a Cubic Dependence of the Diffusivity with the Electron Concentration." Thin Solid Films 518, no. 9 (2010): 2394. https://doi.org/10.1016/j.tsf.2009.09.171.
MLA (9th ed.) CitationCanneaux, Thomas, et al. "Modeling of Phosphorus Diffusion in Ge Accounting for a Cubic Dependence of the Diffusivity with the Electron Concentration." Thin Solid Films, vol. 518, no. 9, 2010, p. 2394, https://doi.org/10.1016/j.tsf.2009.09.171.