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Modeling of phosphorus diffusion in Ge accounting for a cubic dependence of the diffusivity with the electron concentration

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Title: Modeling of phosphorus diffusion in Ge accounting for a cubic dependence of the diffusivity with the electron concentration
Authors: Canneaux, Thomas thomas.canneaux@iness.c-strasbourg.fr, Mathiot, Daniel1, Ponpon, Jean-Pierre1, Leroy, Yann1
Source: Thin Solid Films. Feb2010, Vol. 518 Issue 9, p2394-2397. 4p.
Subjects: Germanium crystals, Diffusion, Phosphorus, Point defects, Holes (Electron deficiencies), Semiconductor doping, Mathematical models
Abstract: Abstract: Up to now, P diffusion in Ge is modeled with an effective diffusivity involving at most a quadratic dependence with the free electron concentration (n). However, recent theoretical studies suggest the existence of a triply negatively charged state for the free vacancy in germanium and experimental data indicate that the E center (PV pair) in Ge has a double acceptor state. These two facts would be consistent with a diffusivity model involving a cubic dependence with n. In this paper the validity of this approach is checked for both pure thermal diffusion (intrinsic and extrinsic) and implanted phosphorus, using either our own experiments or other data available from the literature. Although some discrepancies still exist in some cases for the redistribution of implanted P, it is shown that the introduction of this cubic dependence significantly improves the overall agreement as compared with the usual model. [Copyright &y& Elsevier]
Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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Header DbId: egs
DbLabel: Engineering Source
An: 48118630
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Modeling of phosphorus diffusion in Ge accounting for a cubic dependence of the diffusivity with the electron concentration
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  Data: <searchLink fieldCode="AR" term="%22Canneaux%2C+Thomas%22">Canneaux, Thomas</searchLink><i> thomas.canneaux@iness.c-strasbourg.fr</i><br /><searchLink fieldCode="AR" term="%22Mathiot%2C+Daniel%22">Mathiot, Daniel</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Ponpon%2C+Jean-Pierre%22">Ponpon, Jean-Pierre</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Leroy%2C+Yann%22">Leroy, Yann</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Thin+Solid+Films%22">Thin Solid Films</searchLink>. Feb2010, Vol. 518 Issue 9, p2394-2397. 4p.
– Name: Subject
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  Data: <searchLink fieldCode="DE" term="%22Germanium+crystals%22">Germanium crystals</searchLink><br /><searchLink fieldCode="DE" term="%22Diffusion%22">Diffusion</searchLink><br /><searchLink fieldCode="DE" term="%22Phosphorus%22">Phosphorus</searchLink><br /><searchLink fieldCode="DE" term="%22Point+defects%22">Point defects</searchLink><br /><searchLink fieldCode="DE" term="%22Holes+%28Electron+deficiencies%29%22">Holes (Electron deficiencies)</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+doping%22">Semiconductor doping</searchLink><br /><searchLink fieldCode="DE" term="%22Mathematical+models%22">Mathematical models</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Abstract: Up to now, P diffusion in Ge is modeled with an effective diffusivity involving at most a quadratic dependence with the free electron concentration (n). However, recent theoretical studies suggest the existence of a triply negatively charged state for the free vacancy in germanium and experimental data indicate that the E center (PV pair) in Ge has a double acceptor state. These two facts would be consistent with a diffusivity model involving a cubic dependence with n. In this paper the validity of this approach is checked for both pure thermal diffusion (intrinsic and extrinsic) and implanted phosphorus, using either our own experiments or other data available from the literature. Although some discrepancies still exist in some cases for the redistribution of implanted P, it is shown that the introduction of this cubic dependence significantly improves the overall agreement as compared with the usual model. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1016/j.tsf.2009.09.171
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 2394
    Subjects:
      – SubjectFull: Germanium crystals
        Type: general
      – SubjectFull: Diffusion
        Type: general
      – SubjectFull: Phosphorus
        Type: general
      – SubjectFull: Point defects
        Type: general
      – SubjectFull: Holes (Electron deficiencies)
        Type: general
      – SubjectFull: Semiconductor doping
        Type: general
      – SubjectFull: Mathematical models
        Type: general
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      – TitleFull: Modeling of phosphorus diffusion in Ge accounting for a cubic dependence of the diffusivity with the electron concentration
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            NameFull: Mathiot, Daniel
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              Text: Feb2010
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