APA (7th ed.) Citation

Labrune, M., Moreno, M., & Roca i Cabarrocas, P. (2010). Ultra-shallow junctions formed by quasi-epitaxial growth of boron and phosphorous-doped silicon films at 175°C by rf-PECVD. Thin Solid Films, 518(9), 2528. https://doi.org/10.1016/j.tsf.2009.09.143

Chicago Style (17th ed.) Citation

Labrune, M., M. Moreno, and P. Roca i Cabarrocas. "Ultra-shallow Junctions Formed by Quasi-epitaxial Growth of Boron and Phosphorous-doped Silicon Films at 175°C by Rf-PECVD." Thin Solid Films 518, no. 9 (2010): 2528. https://doi.org/10.1016/j.tsf.2009.09.143.

MLA (9th ed.) Citation

Labrune, M., et al. "Ultra-shallow Junctions Formed by Quasi-epitaxial Growth of Boron and Phosphorous-doped Silicon Films at 175°C by Rf-PECVD." Thin Solid Films, vol. 518, no. 9, 2010, p. 2528, https://doi.org/10.1016/j.tsf.2009.09.143.