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Ultra-shallow junctions formed by quasi-epitaxial growth of boron and phosphorous-doped silicon films at 175°C by rf-PECVD

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Title: Ultra-shallow junctions formed by quasi-epitaxial growth of boron and phosphorous-doped silicon films at 175°C by rf-PECVD
Authors: Labrune, M.1,2 martin.labrune@polytechnique.edu, Moreno, M.1, Roca i Cabarrocas, P.1
Source: Thin Solid Films. Feb2010, Vol. 518 Issue 9, p2528-2530. 3p.
Subjects: Silicon crystals, Thin films, Epitaxy, Semiconductor junctions, Doped semiconductors, Boron, Phosphorus, Plasma-enhanced chemical vapor deposition
Abstract: Abstract: In this paper, we use in-situ and ex-situ spectroscopic ellipsometry as an optical tool to optimize the process conditions that lead to epitaxial growth of undoped and doped silicon films in a standard radio-frequency Plasma Enhanced Chemical Vapor Deposition (rf-PECVD) reactor at temperatures below 200°C. The influence of the plasma conditions (such as pressure, inter-electrode distance, hydrogen dilution and dopant precursor gas concentration) on the nature of the films is studied. This optimization allows us to achieve epitaxial growth of phosphorous-doped and boron-doped silicon films at temperatures as low as 175°C and 140°C, respectively. The epitaxial films possess thicknesses on the order of a few tens of nanometers, and sheet resistance values below 150Ω/□. Annealing in air at 275°C helps to further improve the conductivity of boron-doped layers. Four-point probe sheet resistance measurements and secondary ion mass spectrometry profiles are used to assess the dopant profile in the epitaxial layers. The junctions thus obtained are also characterized through their application in a solar cell, resulting in a fill factor over 76% and an efficiency exceeding 14%. [Copyright &y& Elsevier]
Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 48118674
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  Data: Ultra-shallow junctions formed by quasi-epitaxial growth of boron and phosphorous-doped silicon films at 175°C by rf-PECVD
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  Data: <searchLink fieldCode="JN" term="%22Thin+Solid+Films%22">Thin Solid Films</searchLink>. Feb2010, Vol. 518 Issue 9, p2528-2530. 3p.
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  Data: <searchLink fieldCode="DE" term="%22Silicon+crystals%22">Silicon crystals</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Epitaxy%22">Epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+junctions%22">Semiconductor junctions</searchLink><br /><searchLink fieldCode="DE" term="%22Doped+semiconductors%22">Doped semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Boron%22">Boron</searchLink><br /><searchLink fieldCode="DE" term="%22Phosphorus%22">Phosphorus</searchLink><br /><searchLink fieldCode="DE" term="%22Plasma-enhanced+chemical+vapor+deposition%22">Plasma-enhanced chemical vapor deposition</searchLink>
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  Data: Abstract: In this paper, we use in-situ and ex-situ spectroscopic ellipsometry as an optical tool to optimize the process conditions that lead to epitaxial growth of undoped and doped silicon films in a standard radio-frequency Plasma Enhanced Chemical Vapor Deposition (rf-PECVD) reactor at temperatures below 200°C. The influence of the plasma conditions (such as pressure, inter-electrode distance, hydrogen dilution and dopant precursor gas concentration) on the nature of the films is studied. This optimization allows us to achieve epitaxial growth of phosphorous-doped and boron-doped silicon films at temperatures as low as 175°C and 140°C, respectively. The epitaxial films possess thicknesses on the order of a few tens of nanometers, and sheet resistance values below 150Ω/□. Annealing in air at 275°C helps to further improve the conductivity of boron-doped layers. Four-point probe sheet resistance measurements and secondary ion mass spectrometry profiles are used to assess the dopant profile in the epitaxial layers. The junctions thus obtained are also characterized through their application in a solar cell, resulting in a fill factor over 76% and an efficiency exceeding 14%. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1016/j.tsf.2009.09.143
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 2528
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      – SubjectFull: Silicon crystals
        Type: general
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Epitaxy
        Type: general
      – SubjectFull: Semiconductor junctions
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      – SubjectFull: Doped semiconductors
        Type: general
      – SubjectFull: Boron
        Type: general
      – SubjectFull: Phosphorus
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      – SubjectFull: Plasma-enhanced chemical vapor deposition
        Type: general
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      – TitleFull: Ultra-shallow junctions formed by quasi-epitaxial growth of boron and phosphorous-doped silicon films at 175°C by rf-PECVD
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            NameFull: Labrune, M.
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            NameFull: Moreno, M.
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            NameFull: Roca i Cabarrocas, P.
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              Text: Feb2010
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              Y: 2010
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