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Electronic state and momentum matrix of H-passivated silicon nanonets: A first-principles calculation

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Title: Electronic state and momentum matrix of H-passivated silicon nanonets: A first-principles calculation
Authors: Li, DeXing1, Lin, Linhan1, Feng, Jiayou fengjy@mail.tsinghua.edu.cn
Source: Physica E. Mar2010, Vol. 42 Issue 5, p1583-1589. 7p.
Subjects: Energy levels (Quantum mechanics), Momentum (Mechanics), Nanosilicon, Light sources, Optoelectronics, Band gaps, Integrated circuits, Solid state electronics
Abstract: Abstract: The poor light emission efficiency in silicon prevents its wide application in the field of optoelectronics. Tailoring silicon into direct band-gap semiconductor, will not only vigorously promote the development of silicon-based optoelectronic integrated circuits, but also make significant achievements in the field of solid-state light sources and solar cells. This article explores the nature of the electronic states of the direct band-gap H-passivated silicon nanonets and discusses the mechanism of the band-edge momentum matrix enhancement by means of first-principles calculation. A well corresponding relationship between the band-edge levels of bulk-like silicon and silicon nanonet is established. The first several conduction bands of silicon nanonets have the characteristic of folding energy levels, but the quantum confinement effect induces larger enhancement in momentum matrix elements than those of traditional silicon nanostructures. Two nano-fabrication techniques are proposed to produce the nanonet structure, as is expected to be widely applied in optoelectronic integrated circuits. [Copyright &y& Elsevier]
Copyright of Physica E is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 48473546
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  Data: Electronic state and momentum matrix of H-passivated silicon nanonets: A first-principles calculation
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  Data: <searchLink fieldCode="AR" term="%22Li%2C+DeXing%22">Li, DeXing</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Lin%2C+Linhan%22">Lin, Linhan</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Feng%2C+Jiayou%22">Feng, Jiayou</searchLink><i> fengjy@mail.tsinghua.edu.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22Physica+E%22">Physica E</searchLink>. Mar2010, Vol. 42 Issue 5, p1583-1589. 7p.
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  Data: <searchLink fieldCode="DE" term="%22Energy+levels+%28Quantum+mechanics%29%22">Energy levels (Quantum mechanics)</searchLink><br /><searchLink fieldCode="DE" term="%22Momentum+%28Mechanics%29%22">Momentum (Mechanics)</searchLink><br /><searchLink fieldCode="DE" term="%22Nanosilicon%22">Nanosilicon</searchLink><br /><searchLink fieldCode="DE" term="%22Light+sources%22">Light sources</searchLink><br /><searchLink fieldCode="DE" term="%22Optoelectronics%22">Optoelectronics</searchLink><br /><searchLink fieldCode="DE" term="%22Band+gaps%22">Band gaps</searchLink><br /><searchLink fieldCode="DE" term="%22Integrated+circuits%22">Integrated circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Solid+state+electronics%22">Solid state electronics</searchLink>
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  Data: Abstract: The poor light emission efficiency in silicon prevents its wide application in the field of optoelectronics. Tailoring silicon into direct band-gap semiconductor, will not only vigorously promote the development of silicon-based optoelectronic integrated circuits, but also make significant achievements in the field of solid-state light sources and solar cells. This article explores the nature of the electronic states of the direct band-gap H-passivated silicon nanonets and discusses the mechanism of the band-edge momentum matrix enhancement by means of first-principles calculation. A well corresponding relationship between the band-edge levels of bulk-like silicon and silicon nanonet is established. The first several conduction bands of silicon nanonets have the characteristic of folding energy levels, but the quantum confinement effect induces larger enhancement in momentum matrix elements than those of traditional silicon nanostructures. Two nano-fabrication techniques are proposed to produce the nanonet structure, as is expected to be widely applied in optoelectronic integrated circuits. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of Physica E is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.physe.2009.12.049
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        Text: English
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        Type: general
      – SubjectFull: Momentum (Mechanics)
        Type: general
      – SubjectFull: Nanosilicon
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      – SubjectFull: Light sources
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      – SubjectFull: Integrated circuits
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      – SubjectFull: Solid state electronics
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      – TitleFull: Electronic state and momentum matrix of H-passivated silicon nanonets: A first-principles calculation
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            NameFull: Lin, Linhan
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              Text: Mar2010
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