Bibliographic Details
| Title: |
Study of Light Emission Enhancement in Nanostructured InGaN/GaN Quantum Wells. |
| Authors: |
Cheng-Yu Chang1, Yuh-Renn Wu1 yrwu@cc.ee.ntu.edu.tw |
| Source: |
IEEE Journal of Quantum Electronics. Jun2010, Vol. 46 Issue 6, p884-889. 6p. |
| Subjects: |
Quantum wells, Nanostructures, Light emitting diodes, Quantum chemistry, Quantum efficiency, Spectrum analysis, Stark effect |
| Abstract: |
Recently, InGaN/GaN quantum wells with different nanostructures such as nanoholes and nanorods have been proposed to enhance the light emitting efficiency. This paper calculates the influence of nanostructures to the strain and band profile of the quantum well. The effects of strain relaxation and surface states are analyzed, which could possibly influence the diode emission properties. Our calculation results show that the strain relaxation and the surface state pinning play important roles in enhancing the light emission, reducing the quantum confined Stark effect, and causing the blue shift of the spectrum. Our calculation results provide useful information in analyzing emission properties of nanohole arrays and similar structures. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
