Study of Light Emission Enhancement in Nanostructured InGaN/GaN Quantum Wells.
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| Title: | Study of Light Emission Enhancement in Nanostructured InGaN/GaN Quantum Wells. |
|---|---|
| Authors: | Cheng-Yu Chang1, Yuh-Renn Wu1 yrwu@cc.ee.ntu.edu.tw |
| Source: | IEEE Journal of Quantum Electronics. Jun2010, Vol. 46 Issue 6, p884-889. 6p. |
| Subjects: | Quantum wells, Nanostructures, Light emitting diodes, Quantum chemistry, Quantum efficiency, Spectrum analysis, Stark effect |
| Abstract: | Recently, InGaN/GaN quantum wells with different nanostructures such as nanoholes and nanorods have been proposed to enhance the light emitting efficiency. This paper calculates the influence of nanostructures to the strain and band profile of the quantum well. The effects of strain relaxation and surface states are analyzed, which could possibly influence the diode emission properties. Our calculation results show that the strain relaxation and the surface state pinning play important roles in enhancing the light emission, reducing the quantum confined Stark effect, and causing the blue shift of the spectrum. Our calculation results provide useful information in analyzing emission properties of nanohole arrays and similar structures. [ABSTRACT FROM AUTHOR] |
| Copyright of IEEE Journal of Quantum Electronics is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 48593482 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Study of Light Emission Enhancement in Nanostructured InGaN/GaN Quantum Wells. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Cheng-Yu+Chang%22">Cheng-Yu Chang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Yuh-Renn+Wu%22">Yuh-Renn Wu</searchLink><relatesTo>1</relatesTo><i> yrwu@cc.ee.ntu.edu.tw</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22IEEE+Journal+of+Quantum+Electronics%22">IEEE Journal of Quantum Electronics</searchLink>. Jun2010, Vol. 46 Issue 6, p884-889. 6p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Quantum+wells%22">Quantum wells</searchLink><br /><searchLink fieldCode="DE" term="%22Nanostructures%22">Nanostructures</searchLink><br /><searchLink fieldCode="DE" term="%22Light+emitting+diodes%22">Light emitting diodes</searchLink><br /><searchLink fieldCode="DE" term="%22Quantum+chemistry%22">Quantum chemistry</searchLink><br /><searchLink fieldCode="DE" term="%22Quantum+efficiency%22">Quantum efficiency</searchLink><br /><searchLink fieldCode="DE" term="%22Spectrum+analysis%22">Spectrum analysis</searchLink><br /><searchLink fieldCode="DE" term="%22Stark+effect%22">Stark effect</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Recently, InGaN/GaN quantum wells with different nanostructures such as nanoholes and nanorods have been proposed to enhance the light emitting efficiency. This paper calculates the influence of nanostructures to the strain and band profile of the quantum well. The effects of strain relaxation and surface states are analyzed, which could possibly influence the diode emission properties. Our calculation results show that the strain relaxation and the surface state pinning play important roles in enhancing the light emission, reducing the quantum confined Stark effect, and causing the blue shift of the spectrum. Our calculation results provide useful information in analyzing emission properties of nanohole arrays and similar structures. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of IEEE Journal of Quantum Electronics is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/JQE.2010.2040515 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 6 StartPage: 884 Subjects: – SubjectFull: Quantum wells Type: general – SubjectFull: Nanostructures Type: general – SubjectFull: Light emitting diodes Type: general – SubjectFull: Quantum chemistry Type: general – SubjectFull: Quantum efficiency Type: general – SubjectFull: Spectrum analysis Type: general – SubjectFull: Stark effect Type: general Titles: – TitleFull: Study of Light Emission Enhancement in Nanostructured InGaN/GaN Quantum Wells. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Cheng-Yu Chang – PersonEntity: Name: NameFull: Yuh-Renn Wu IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 06 Text: Jun2010 Type: published Y: 2010 Identifiers: – Type: issn-print Value: 00189197 Numbering: – Type: volume Value: 46 – Type: issue Value: 6 Titles: – TitleFull: IEEE Journal of Quantum Electronics Type: main |
| ResultId | 1 |
