Plasmon damping below the Landau regime: the role of defects in epitaxial graphene.
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| Title: | Plasmon damping below the Landau regime: the role of defects in epitaxial graphene. |
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| Authors: | Langer, T.1,2, Baringhaus, J.1, Pfnür, H.1, Schumacher, H. W.2, Tegenkamp, C.1 tegenkamp@fkp.uni-hannover.de |
| Source: | New Journal of Physics. Mar2010, Vol. 12 Issue 3, p1-12. 12p. |
| Subjects: | Plasmons (Physics), Landau damping, Low energy electron diffraction, Electron energy loss spectroscopy, Graphene |
| Abstract: | The sheet plasmon in epitaxially grown graphene layers on SiC(0001) and the influence of surface roughness have been investigated in detail by means of low-energy electron diffraction (LEED) and electron energy loss spectroscopy (EELS).We show that the existence of steps or grain boundaries in this epitaxial system is a source of strong damping, while the dispersion is rather insensitive to defects. To the first order, the lifetime of the plasmons was found to be proportional to the average terrace length and to the plasmon wavelength. A possible reason for this surprisingly efficient plasmon damping may be the close coincidence of phase (and group) velocities of the plasmons (almost linear dispersion) with the Fermi velocity of the electrons. Therefore, uncorrelated defects like steps only have to act as a momentum source to effectively couple plasmons to the electron-hole continuum. [ABSTRACT FROM AUTHOR] |
| Copyright of New Journal of Physics is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 48996926 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Plasmon damping below the Landau regime: the role of defects in epitaxial graphene. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Langer%2C+T%2E%22">Langer, T.</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Baringhaus%2C+J%2E%22">Baringhaus, J.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Pfnür%2C+H%2E%22">Pfnür, H.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Schumacher%2C+H%2E+W%2E%22">Schumacher, H. W.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Tegenkamp%2C+C%2E%22">Tegenkamp, C.</searchLink><relatesTo>1</relatesTo><i> tegenkamp@fkp.uni-hannover.de</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22New+Journal+of+Physics%22">New Journal of Physics</searchLink>. Mar2010, Vol. 12 Issue 3, p1-12. 12p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Plasmons+%28Physics%29%22">Plasmons (Physics)</searchLink><br /><searchLink fieldCode="DE" term="%22Landau+damping%22">Landau damping</searchLink><br /><searchLink fieldCode="DE" term="%22Low+energy+electron+diffraction%22">Low energy electron diffraction</searchLink><br /><searchLink fieldCode="DE" term="%22Electron+energy+loss+spectroscopy%22">Electron energy loss spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Graphene%22">Graphene</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: The sheet plasmon in epitaxially grown graphene layers on SiC(0001) and the influence of surface roughness have been investigated in detail by means of low-energy electron diffraction (LEED) and electron energy loss spectroscopy (EELS).We show that the existence of steps or grain boundaries in this epitaxial system is a source of strong damping, while the dispersion is rather insensitive to defects. To the first order, the lifetime of the plasmons was found to be proportional to the average terrace length and to the plasmon wavelength. A possible reason for this surprisingly efficient plasmon damping may be the close coincidence of phase (and group) velocities of the plasmons (almost linear dispersion) with the Fermi velocity of the electrons. Therefore, uncorrelated defects like steps only have to act as a momentum source to effectively couple plasmons to the electron-hole continuum. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of New Journal of Physics is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1088/1367-2630/12/3/033017 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 12 StartPage: 1 Subjects: – SubjectFull: Plasmons (Physics) Type: general – SubjectFull: Landau damping Type: general – SubjectFull: Low energy electron diffraction Type: general – SubjectFull: Electron energy loss spectroscopy Type: general – SubjectFull: Graphene Type: general Titles: – TitleFull: Plasmon damping below the Landau regime: the role of defects in epitaxial graphene. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Langer, T. – PersonEntity: Name: NameFull: Baringhaus, J. – PersonEntity: Name: NameFull: Pfnür, H. – PersonEntity: Name: NameFull: Schumacher, H. W. – PersonEntity: Name: NameFull: Tegenkamp, C. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 03 Text: Mar2010 Type: published Y: 2010 Identifiers: – Type: issn-print Value: 13672630 Numbering: – Type: volume Value: 12 – Type: issue Value: 3 Titles: – TitleFull: New Journal of Physics Type: main |
| ResultId | 1 |
