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Radiation damage of contact structures with diffusion barriers exposed to irradiation with 60Coγ-ray photons.

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Title: Radiation damage of contact structures with diffusion barriers exposed to irradiation with 60Coγ-ray photons.
Authors: Belyaev, A. E.1, Boltovets, N. S.2, Konakova, R. V.1 konakova@isp.kiev.ua, Milenin, V. V.1, Sveshnikov, Yu. N.3, Sheremet, V. N.1
Source: Semiconductors. Apr2010, Vol. 44 Issue 4, p448-456. 9p. 1 Black and White Photograph, 1 Diagram, 4 Graphs.
Subjects: Ionizing radiation, Semiconductor diffusion, Diodes, Vacuum tubes, Oxygen
Abstract: The effect of ionizing radiation of 60Co γ-ray photons in the dose range 104–2 × 109 rad on metal-semiconductor Au-ZrB x-AlGaN/GaN and Au-TiB x-Al-Ti- n-GaN contacts and Au-ZrB x- n-GaN Schottky diodes is examined. The contacts with the TiB x and ZrB x diffusion barriers do not degrade under the effect of ionizing radiation if the dose does not exceed 108 rad. The Au-ZrB x- n-GaN Schottky diodes remain stable in the dose range 104–106 rad. As the radiation dose is increased to ≳108 rad, the damage to the contact metallization increases and is accompanied by formation of through pores, which is conducive to accumulation of oxygen at the Au-ZrB x(TiB x) interfaces and to an increase in mass transport of atoms in contact-forming layers. In this case, irradiation-caused degradation of the Schottky diodes is observed. Possible mechanisms of radiation damage of contact structures with diffusion barriers are analyzed. [ABSTRACT FROM AUTHOR]
Copyright of Semiconductors is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: <searchLink fieldCode="JN" term="%22Semiconductors%22">Semiconductors</searchLink>. Apr2010, Vol. 44 Issue 4, p448-456. 9p. 1 Black and White Photograph, 1 Diagram, 4 Graphs.
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  Data: <searchLink fieldCode="DE" term="%22Ionizing+radiation%22">Ionizing radiation</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+diffusion%22">Semiconductor diffusion</searchLink><br /><searchLink fieldCode="DE" term="%22Diodes%22">Diodes</searchLink><br /><searchLink fieldCode="DE" term="%22Vacuum+tubes%22">Vacuum tubes</searchLink><br /><searchLink fieldCode="DE" term="%22Oxygen%22">Oxygen</searchLink>
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  Data: The effect of ionizing radiation of 60Co γ-ray photons in the dose range 104–2 × 109 rad on metal-semiconductor Au-ZrB x-AlGaN/GaN and Au-TiB x-Al-Ti- n-GaN contacts and Au-ZrB x- n-GaN Schottky diodes is examined. The contacts with the TiB x and ZrB x diffusion barriers do not degrade under the effect of ionizing radiation if the dose does not exceed 108 rad. The Au-ZrB x- n-GaN Schottky diodes remain stable in the dose range 104–106 rad. As the radiation dose is increased to ≳108 rad, the damage to the contact metallization increases and is accompanied by formation of through pores, which is conducive to accumulation of oxygen at the Au-ZrB x(TiB x) interfaces and to an increase in mass transport of atoms in contact-forming layers. In this case, irradiation-caused degradation of the Schottky diodes is observed. Possible mechanisms of radiation damage of contact structures with diffusion barriers are analyzed. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Semiconductors is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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