An Analysis for Losses and Confinement Factors for the Regions of a Semiconductor Single Asymmetric Step-Index Laser in Terms of Normalized Propagation Constants for Even and Odd Fields.
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| Title: | An Analysis for Losses and Confinement Factors for the Regions of a Semiconductor Single Asymmetric Step-Index Laser in Terms of Normalized Propagation Constants for Even and Odd Fields. |
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| Authors: | Temiz, Mustafa1 mustafatemiz@pau.edu.tr, Unal, Mehmet1 |
| Source: | Gazi University Journal of Science. 2010, Vol. 23 Issue 2, p171-176. 6p. 3 Diagrams, 1 Chart, 1 Graph. |
| Subjects: | Mass attenuation coefficients, Semiconductor characterization, Asymmetric synthesis, Industrial lasers, Semiconductor lasers |
| Abstract: | A requested quantity of the laser can be obtained in terms of normalized propagation constant, which is represented by alpha, belonging to active region. As a new computation procedure this alpha method based on structural property of material contains the computing of the requested quantity for the semiconductor laser theoretically when width of the active region, refractive indices of the regions and wave length are given. In this work, the loss and absorption constants or confinement factors have been analyzed in terms of normalized propagation constants for even and odd fields in a semiconductor single asymmetric step-index laser. Some important parameters, such as propagation constants, effective index of active region, phase constant, phase velocity, absorption constants or confinement factors of the regions, percent of device loss and percent of active region loss, coordinate variables η , ζ for energy eigenvalues for charged carriers in the perpendicular coordinate system ζ - η for single asymmetric step-index laser have been obtained. The validities of found formulas have been tested, numerically. Since effective refractive index belong to active region of the laser is constant, the phase constant and the phase velocity are also constant for each of even and odd field. [ABSTRACT FROM AUTHOR] |
| Copyright of Gazi University Journal of Science is the property of Gazi University Journal of Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Links: – Type: pdflink Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 51839119 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: An Analysis for Losses and Confinement Factors for the Regions of a Semiconductor Single Asymmetric Step-Index Laser in Terms of Normalized Propagation Constants for Even and Odd Fields. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Temiz%2C+Mustafa%22">Temiz, Mustafa</searchLink><relatesTo>1</relatesTo><i> mustafatemiz@pau.edu.tr</i><br /><searchLink fieldCode="AR" term="%22Unal%2C+Mehmet%22">Unal, Mehmet</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Gazi+University+Journal+of+Science%22">Gazi University Journal of Science</searchLink>. 2010, Vol. 23 Issue 2, p171-176. 6p. 3 Diagrams, 1 Chart, 1 Graph. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Mass+attenuation+coefficients%22">Mass attenuation coefficients</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+characterization%22">Semiconductor characterization</searchLink><br /><searchLink fieldCode="DE" term="%22Asymmetric+synthesis%22">Asymmetric synthesis</searchLink><br /><searchLink fieldCode="DE" term="%22Industrial+lasers%22">Industrial lasers</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+lasers%22">Semiconductor lasers</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: A requested quantity of the laser can be obtained in terms of normalized propagation constant, which is represented by alpha, belonging to active region. As a new computation procedure this alpha method based on structural property of material contains the computing of the requested quantity for the semiconductor laser theoretically when width of the active region, refractive indices of the regions and wave length are given. In this work, the loss and absorption constants or confinement factors have been analyzed in terms of normalized propagation constants for even and odd fields in a semiconductor single asymmetric step-index laser. Some important parameters, such as propagation constants, effective index of active region, phase constant, phase velocity, absorption constants or confinement factors of the regions, percent of device loss and percent of active region loss, coordinate variables η , ζ for energy eigenvalues for charged carriers in the perpendicular coordinate system ζ - η for single asymmetric step-index laser have been obtained. The validities of found formulas have been tested, numerically. Since effective refractive index belong to active region of the laser is constant, the phase constant and the phase velocity are also constant for each of even and odd field. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Gazi University Journal of Science is the property of Gazi University Journal of Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 6 StartPage: 171 Subjects: – SubjectFull: Mass attenuation coefficients Type: general – SubjectFull: Semiconductor characterization Type: general – SubjectFull: Asymmetric synthesis Type: general – SubjectFull: Industrial lasers Type: general – SubjectFull: Semiconductor lasers Type: general Titles: – TitleFull: An Analysis for Losses and Confinement Factors for the Regions of a Semiconductor Single Asymmetric Step-Index Laser in Terms of Normalized Propagation Constants for Even and Odd Fields. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Temiz, Mustafa – PersonEntity: Name: NameFull: Unal, Mehmet IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 04 Text: 2010 Type: published Y: 2010 Identifiers: – Type: issn-print Value: 13039709 Numbering: – Type: volume Value: 23 – Type: issue Value: 2 Titles: – TitleFull: Gazi University Journal of Science Type: main |
| ResultId | 1 |
