Performance Degradation of Pentacene-Based Organic Thin-Film Transistors Under Positive Drain Bias Stress in the Atmosphere.
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| Title: | Performance Degradation of Pentacene-Based Organic Thin-Film Transistors Under Positive Drain Bias Stress in the Atmosphere. |
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| Authors: | Ching-Lin Fan1,2 clfan@mail.ntust.edu.tw, Tsung-Hsien Yang1, Chin-Yuan Chiang1 |
| Source: | IEEE Electron Device Letters. Aug2010, Vol. 31 Issue 8, p887-889. 3p. |
| Subjects: | Thin film transistors, Electric insulators & insulation, Pentacene, Reliability (Personality trait), Electric fields |
| Abstract: | The drain bias stress effect on organic thin-film transistor (OTFT) performance degradation in the atmosphere has been investigated. The OTFTs under drain bias stress exhibit larger performance degradation than those under atmospheric stress. It is also found that the performance degradation under positive drain bias stress is larger than that under negative drain bias stress. We presume that the OTFT performance degradation under positive drain bias stress resulted from large lateral electrical field and vertical electrical field, resulting in increased trap state density (Ntrap) in the bulk channel and carrier injection into the gate insulator, respectively. [ABSTRACT FROM AUTHOR] |
| Copyright of IEEE Electron Device Letters is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 52867685 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Performance Degradation of Pentacene-Based Organic Thin-Film Transistors Under Positive Drain Bias Stress in the Atmosphere. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Ching-Lin+Fan%22">Ching-Lin Fan</searchLink><relatesTo>1,2</relatesTo><i> clfan@mail.ntust.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Tsung-Hsien+Yang%22">Tsung-Hsien Yang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Chin-Yuan+Chiang%22">Chin-Yuan Chiang</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>. Aug2010, Vol. 31 Issue 8, p887-889. 3p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Thin+film+transistors%22">Thin film transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+insulators+%26+insulation%22">Electric insulators & insulation</searchLink><br /><searchLink fieldCode="DE" term="%22Pentacene%22">Pentacene</searchLink><br /><searchLink fieldCode="DE" term="%22Reliability+%28Personality+trait%29%22">Reliability (Personality trait)</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+fields%22">Electric fields</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: The drain bias stress effect on organic thin-film transistor (OTFT) performance degradation in the atmosphere has been investigated. The OTFTs under drain bias stress exhibit larger performance degradation than those under atmospheric stress. It is also found that the performance degradation under positive drain bias stress is larger than that under negative drain bias stress. We presume that the OTFT performance degradation under positive drain bias stress resulted from large lateral electrical field and vertical electrical field, resulting in increased trap state density (Ntrap) in the bulk channel and carrier injection into the gate insulator, respectively. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of IEEE Electron Device Letters is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/LED.2010.2051212 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 3 StartPage: 887 Subjects: – SubjectFull: Thin film transistors Type: general – SubjectFull: Electric insulators & insulation Type: general – SubjectFull: Pentacene Type: general – SubjectFull: Reliability (Personality trait) Type: general – SubjectFull: Electric fields Type: general Titles: – TitleFull: Performance Degradation of Pentacene-Based Organic Thin-Film Transistors Under Positive Drain Bias Stress in the Atmosphere. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Ching-Lin Fan – PersonEntity: Name: NameFull: Tsung-Hsien Yang – PersonEntity: Name: NameFull: Chin-Yuan Chiang IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 08 Text: Aug2010 Type: published Y: 2010 Identifiers: – Type: issn-print Value: 07413106 Numbering: – Type: volume Value: 31 – Type: issue Value: 8 Titles: – TitleFull: IEEE Electron Device Letters Type: main |
| ResultId | 1 |
