Antimony alloys for phase-change memory with high thermal stability
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| Title: | Antimony alloys for phase-change memory with high thermal stability |
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| Authors: | Kao, Kin-Fu1, Chang, Chih-Chung1, Chen, Frederick T.2, Tsai, Ming-Jinn2, Chin, Tsung-Shune1,3 tschin@fcu.edu.tw |
| Source: | Scripta Materialia. Oct2010, Vol. 63 Issue 8, p855-858. 4p. |
| Subjects: | Antimony alloys, Phase transitions, Thermal properties of metals, Ternary alloys, Chalcogenides, Crystallization, Temperature effect, Computer storage devices |
| Abstract: | We demonstrate two Sb-based alloys, Ga25Te8Sb67 and Ga18Te12Sb70, that have a crystallization temperature above 245°C and activation energy of crystallization greater than 5eV, for phase-change memory application. The temperature for 10year data retention reaches 183 and 210°C for Ga18Te12Sb70 and Ga25Te8Sb67, respectively. Test cells made of alloy Ga25Te8Sb67 show similar memory switching behavior at pulse widths of 500–20ns. Compared with the benchmark chalcogenide Ge2Sb2Te5, the two antimonide alloys possess much improved thermal stability for applications in phase-change memory. [ABSTRACT FROM AUTHOR] |
| Copyright of Scripta Materialia is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 52912706 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Antimony alloys for phase-change memory with high thermal stability – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Kao%2C+Kin-Fu%22">Kao, Kin-Fu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Chang%2C+Chih-Chung%22">Chang, Chih-Chung</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Chen%2C+Frederick+T%2E%22">Chen, Frederick T.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Tsai%2C+Ming-Jinn%22">Tsai, Ming-Jinn</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Chin%2C+Tsung-Shune%22">Chin, Tsung-Shune</searchLink><relatesTo>1,3</relatesTo><i> tschin@fcu.edu.tw</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Scripta+Materialia%22">Scripta Materialia</searchLink>. Oct2010, Vol. 63 Issue 8, p855-858. 4p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Antimony+alloys%22">Antimony alloys</searchLink><br /><searchLink fieldCode="DE" term="%22Phase+transitions%22">Phase transitions</searchLink><br /><searchLink fieldCode="DE" term="%22Thermal+properties+of+metals%22">Thermal properties of metals</searchLink><br /><searchLink fieldCode="DE" term="%22Ternary+alloys%22">Ternary alloys</searchLink><br /><searchLink fieldCode="DE" term="%22Chalcogenides%22">Chalcogenides</searchLink><br /><searchLink fieldCode="DE" term="%22Crystallization%22">Crystallization</searchLink><br /><searchLink fieldCode="DE" term="%22Temperature+effect%22">Temperature effect</searchLink><br /><searchLink fieldCode="DE" term="%22Computer+storage+devices%22">Computer storage devices</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: We demonstrate two Sb-based alloys, Ga25Te8Sb67 and Ga18Te12Sb70, that have a crystallization temperature above 245°C and activation energy of crystallization greater than 5eV, for phase-change memory application. The temperature for 10year data retention reaches 183 and 210°C for Ga18Te12Sb70 and Ga25Te8Sb67, respectively. Test cells made of alloy Ga25Te8Sb67 show similar memory switching behavior at pulse widths of 500–20ns. Compared with the benchmark chalcogenide Ge2Sb2Te5, the two antimonide alloys possess much improved thermal stability for applications in phase-change memory. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Scripta Materialia is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.scriptamat.2010.06.036 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 4 StartPage: 855 Subjects: – SubjectFull: Antimony alloys Type: general – SubjectFull: Phase transitions Type: general – SubjectFull: Thermal properties of metals Type: general – SubjectFull: Ternary alloys Type: general – SubjectFull: Chalcogenides Type: general – SubjectFull: Crystallization Type: general – SubjectFull: Temperature effect Type: general – SubjectFull: Computer storage devices Type: general Titles: – TitleFull: Antimony alloys for phase-change memory with high thermal stability Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Kao, Kin-Fu – PersonEntity: Name: NameFull: Chang, Chih-Chung – PersonEntity: Name: NameFull: Chen, Frederick T. – PersonEntity: Name: NameFull: Tsai, Ming-Jinn – PersonEntity: Name: NameFull: Chin, Tsung-Shune IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 10 Text: Oct2010 Type: published Y: 2010 Identifiers: – Type: issn-print Value: 13596462 Numbering: – Type: volume Value: 63 – Type: issue Value: 8 Titles: – TitleFull: Scripta Materialia Type: main |
| ResultId | 1 |