Antimony alloys for phase-change memory with high thermal stability

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Title: Antimony alloys for phase-change memory with high thermal stability
Authors: Kao, Kin-Fu1, Chang, Chih-Chung1, Chen, Frederick T.2, Tsai, Ming-Jinn2, Chin, Tsung-Shune1,3 tschin@fcu.edu.tw
Source: Scripta Materialia. Oct2010, Vol. 63 Issue 8, p855-858. 4p.
Subjects: Antimony alloys, Phase transitions, Thermal properties of metals, Ternary alloys, Chalcogenides, Crystallization, Temperature effect, Computer storage devices
Abstract: We demonstrate two Sb-based alloys, Ga25Te8Sb67 and Ga18Te12Sb70, that have a crystallization temperature above 245°C and activation energy of crystallization greater than 5eV, for phase-change memory application. The temperature for 10year data retention reaches 183 and 210°C for Ga18Te12Sb70 and Ga25Te8Sb67, respectively. Test cells made of alloy Ga25Te8Sb67 show similar memory switching behavior at pulse widths of 500–20ns. Compared with the benchmark chalcogenide Ge2Sb2Te5, the two antimonide alloys possess much improved thermal stability for applications in phase-change memory. [ABSTRACT FROM AUTHOR]
Copyright of Scripta Materialia is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Antimony alloys for phase-change memory with high thermal stability
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  Data: <searchLink fieldCode="AR" term="%22Kao%2C+Kin-Fu%22">Kao, Kin-Fu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Chang%2C+Chih-Chung%22">Chang, Chih-Chung</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Chen%2C+Frederick+T%2E%22">Chen, Frederick T.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Tsai%2C+Ming-Jinn%22">Tsai, Ming-Jinn</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Chin%2C+Tsung-Shune%22">Chin, Tsung-Shune</searchLink><relatesTo>1,3</relatesTo><i> tschin@fcu.edu.tw</i>
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  Data: <searchLink fieldCode="JN" term="%22Scripta+Materialia%22">Scripta Materialia</searchLink>. Oct2010, Vol. 63 Issue 8, p855-858. 4p.
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  Data: <searchLink fieldCode="DE" term="%22Antimony+alloys%22">Antimony alloys</searchLink><br /><searchLink fieldCode="DE" term="%22Phase+transitions%22">Phase transitions</searchLink><br /><searchLink fieldCode="DE" term="%22Thermal+properties+of+metals%22">Thermal properties of metals</searchLink><br /><searchLink fieldCode="DE" term="%22Ternary+alloys%22">Ternary alloys</searchLink><br /><searchLink fieldCode="DE" term="%22Chalcogenides%22">Chalcogenides</searchLink><br /><searchLink fieldCode="DE" term="%22Crystallization%22">Crystallization</searchLink><br /><searchLink fieldCode="DE" term="%22Temperature+effect%22">Temperature effect</searchLink><br /><searchLink fieldCode="DE" term="%22Computer+storage+devices%22">Computer storage devices</searchLink>
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  Label: Abstract
  Group: Ab
  Data: We demonstrate two Sb-based alloys, Ga25Te8Sb67 and Ga18Te12Sb70, that have a crystallization temperature above 245°C and activation energy of crystallization greater than 5eV, for phase-change memory application. The temperature for 10year data retention reaches 183 and 210°C for Ga18Te12Sb70 and Ga25Te8Sb67, respectively. Test cells made of alloy Ga25Te8Sb67 show similar memory switching behavior at pulse widths of 500–20ns. Compared with the benchmark chalcogenide Ge2Sb2Te5, the two antimonide alloys possess much improved thermal stability for applications in phase-change memory. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Scripta Materialia is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.scriptamat.2010.06.036
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      – Code: eng
        Text: English
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      – SubjectFull: Antimony alloys
        Type: general
      – SubjectFull: Phase transitions
        Type: general
      – SubjectFull: Thermal properties of metals
        Type: general
      – SubjectFull: Ternary alloys
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      – SubjectFull: Chalcogenides
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      – SubjectFull: Crystallization
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      – SubjectFull: Temperature effect
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      – SubjectFull: Computer storage devices
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      – TitleFull: Antimony alloys for phase-change memory with high thermal stability
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              Text: Oct2010
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