Bibliographic Details
| Title: |
Thermal properties and structure of TeGa2Sb7 thin films for phase-change memory |
| Authors: |
Chu, Yung-Ching1, Chang, Po-Chin1, Kao, Kin-Fu1, Chang, Shih-Ching1, Chin, Tsung-Shune1,2 tschin@mx.nthu.edu.tw |
| Source: |
Thin Solid Films. Oct2010, Vol. 518 Issue 24, p7316-7319. 4p. |
| Subjects: |
Thin films, Thermal properties of metals, Molecular structure, Chemical systems, Computer storage devices, Phase transitions, Crystallization, Chemical kinetics |
| Abstract: |
Abstract: We disclose in this paper properties of a composition TeGa2Sb7 selected from the pseudo-tie line Sb80Te20–GaSb in Te–Ga–Sb system. TeGa2Sb7 film possesses crystallization temperature 236°C and activation-energy of crystallization 5.76eV, by Kissinger''s peak-shift method. The study on failure-time versus isothermal temperatures fits in an Arrhenius plot, which can be extrapolated to the 10year data retention at 200°C. Grazing-incident X-ray diffraction shows that crystallized TeGa2Sb7 films compose of a single HCP phase. Electrical resistance decreases by four orders-of-magnitude upon crystallization. Memory switching is verified using a bridge-memory-cell. TeGa2Sb7 is a potential for phase-change memory anticipating high thermal stability. [Copyright &y& Elsevier] |
|
Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) |
| Database: |
Engineering Source |
