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Thermal properties and structure of TeGa2Sb7 thin films for phase-change memory

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Title: Thermal properties and structure of TeGa2Sb7 thin films for phase-change memory
Authors: Chu, Yung-Ching1, Chang, Po-Chin1, Kao, Kin-Fu1, Chang, Shih-Ching1, Chin, Tsung-Shune1,2 tschin@mx.nthu.edu.tw
Source: Thin Solid Films. Oct2010, Vol. 518 Issue 24, p7316-7319. 4p.
Subjects: Thin films, Thermal properties of metals, Molecular structure, Chemical systems, Computer storage devices, Phase transitions, Crystallization, Chemical kinetics
Abstract: Abstract: We disclose in this paper properties of a composition TeGa2Sb7 selected from the pseudo-tie line Sb80Te20–GaSb in Te–Ga–Sb system. TeGa2Sb7 film possesses crystallization temperature 236°C and activation-energy of crystallization 5.76eV, by Kissinger''s peak-shift method. The study on failure-time versus isothermal temperatures fits in an Arrhenius plot, which can be extrapolated to the 10year data retention at 200°C. Grazing-incident X-ray diffraction shows that crystallized TeGa2Sb7 films compose of a single HCP phase. Electrical resistance decreases by four orders-of-magnitude upon crystallization. Memory switching is verified using a bridge-memory-cell. TeGa2Sb7 is a potential for phase-change memory anticipating high thermal stability. [Copyright &y& Elsevier]
Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 53789410
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Thermal properties and structure of TeGa<subscript>2</subscript>Sb<subscript>7</subscript> thin films for phase-change memory
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  Data: <searchLink fieldCode="AR" term="%22Chu%2C+Yung-Ching%22">Chu, Yung-Ching</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Chang%2C+Po-Chin%22">Chang, Po-Chin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Kao%2C+Kin-Fu%22">Kao, Kin-Fu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Chang%2C+Shih-Ching%22">Chang, Shih-Ching</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Chin%2C+Tsung-Shune%22">Chin, Tsung-Shune</searchLink><relatesTo>1,2</relatesTo><i> tschin@mx.nthu.edu.tw</i>
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  Data: <searchLink fieldCode="JN" term="%22Thin+Solid+Films%22">Thin Solid Films</searchLink>. Oct2010, Vol. 518 Issue 24, p7316-7319. 4p.
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  Data: <searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Thermal+properties+of+metals%22">Thermal properties of metals</searchLink><br /><searchLink fieldCode="DE" term="%22Molecular+structure%22">Molecular structure</searchLink><br /><searchLink fieldCode="DE" term="%22Chemical+systems%22">Chemical systems</searchLink><br /><searchLink fieldCode="DE" term="%22Computer+storage+devices%22">Computer storage devices</searchLink><br /><searchLink fieldCode="DE" term="%22Phase+transitions%22">Phase transitions</searchLink><br /><searchLink fieldCode="DE" term="%22Crystallization%22">Crystallization</searchLink><br /><searchLink fieldCode="DE" term="%22Chemical+kinetics%22">Chemical kinetics</searchLink>
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  Data: Abstract: We disclose in this paper properties of a composition TeGa2Sb7 selected from the pseudo-tie line Sb80Te20–GaSb in Te–Ga–Sb system. TeGa2Sb7 film possesses crystallization temperature 236°C and activation-energy of crystallization 5.76eV, by Kissinger''s peak-shift method. The study on failure-time versus isothermal temperatures fits in an Arrhenius plot, which can be extrapolated to the 10year data retention at 200°C. Grazing-incident X-ray diffraction shows that crystallized TeGa2Sb7 films compose of a single HCP phase. Electrical resistance decreases by four orders-of-magnitude upon crystallization. Memory switching is verified using a bridge-memory-cell. TeGa2Sb7 is a potential for phase-change memory anticipating high thermal stability. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.tsf.2010.04.101
    Languages:
      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 7316
    Subjects:
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Thermal properties of metals
        Type: general
      – SubjectFull: Molecular structure
        Type: general
      – SubjectFull: Chemical systems
        Type: general
      – SubjectFull: Computer storage devices
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      – SubjectFull: Phase transitions
        Type: general
      – SubjectFull: Crystallization
        Type: general
      – SubjectFull: Chemical kinetics
        Type: general
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      – TitleFull: Thermal properties and structure of TeGa2Sb7 thin films for phase-change memory
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            NameFull: Chu, Yung-Ching
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            NameFull: Chang, Po-Chin
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            NameFull: Kao, Kin-Fu
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            NameFull: Chang, Shih-Ching
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            NameFull: Chin, Tsung-Shune
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              M: 10
              Text: Oct2010
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              Y: 2010
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              Value: 518
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