APA (7th ed.) Citation

Howe, B., Sammann, E., Wen, J., Spila, T., Greene, J., Hultman, L., & Petrov, I. (2011). Real-time control of AlN incorporation in epitaxial Hf1− x Al x N using high-flux, low-energy (10–40eV) ion bombardment during reactive magnetron sputter deposition from a Hf0.7Al0.3 alloy target. Acta Materialia, 59(2), 421. https://doi.org/10.1016/j.actamat.2010.08.023

Chicago Style (17th ed.) Citation

Howe, B.M, E. Sammann, J.G Wen, T. Spila, J.E Greene, L. Hultman, and I. Petrov. "Real-time Control of AlN Incorporation in Epitaxial Hf1− X Al X N Using High-flux, Low-energy (10–40eV) Ion Bombardment During Reactive Magnetron Sputter Deposition from a Hf0.7Al0.3 Alloy Target." Acta Materialia 59, no. 2 (2011): 421. https://doi.org/10.1016/j.actamat.2010.08.023.

MLA (9th ed.) Citation

Howe, B.M, et al. "Real-time Control of AlN Incorporation in Epitaxial Hf1− X Al X N Using High-flux, Low-energy (10–40eV) Ion Bombardment During Reactive Magnetron Sputter Deposition from a Hf0.7Al0.3 Alloy Target." Acta Materialia, vol. 59, no. 2, 2011, p. 421, https://doi.org/10.1016/j.actamat.2010.08.023.