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Real-time control of AlN incorporation in epitaxial Hf1− x Al x N using high-flux, low-energy (10–40eV) ion bombardment during reactive magnetron sputter deposition from a Hf0.7Al0.3 alloy target

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Title: Real-time control of AlN incorporation in epitaxial Hf1− x Al x N using high-flux, low-energy (10–40eV) ion bombardment during reactive magnetron sputter deposition from a Hf0.7Al0.3 alloy target
Authors: Howe, B.M.1, Sammann, E.1, Wen, J.G.1, Spila, T.1, Greene, J.E.1, Hultman, L.2, Petrov, I.1 petrov@illinois.edu
Source: Acta Materialia. Jan2011, Vol. 59 Issue 2, p421-428. 8p.
Subjects: Real-time control, Aluminum compounds, Ion bombardment, Magnetron sputtering, Thin films, Magnesium oxide, Ultrahigh vacuum, Epitaxy
Abstract: Abstract: The AlN incorporation probability in single crystal Hf1− x Al x N(001) layers is controllably adjusted between ∼0% and 100% by varying the ion energy (E i) incident at the growing film over a narrow range, 10–40eV. The layers are grown on MgO(001) at 450°C using ultrahigh vacuum magnetically unbalanced reactive magnetron sputtering from a Hf0.7Al0.3 alloy target in a 5%-N2/Ar atmosphere at a total pressure of 20mTorr (2.67Pa). The ion to metal flux ratio incident at the growing film is constant at 8. Epitaxial film compositions vary from x =0.30 with E i =10eV, to 0.27 with E i =20eV, 0.17 with E i =30eV, and ⩽0.002 with E i ⩾40eV. Thus, the AlN incorporation probability decreases by greater than two orders of magnitude. This extraordinary range in real-time manipulation of film chemistry during deposition is due to the efficient resputtering of deposited Al atoms (27 amu) by Ar+ ions (40 amu) neutralized and backscattered from heavy Hf atoms (178.5 amu) in the film. This provides a new reaction pathway to synthesize, at high deposition rates, compositionally complex heterostructures, multilayers, and superlattices with abrupt interfaces from a single alloy target by controllably switching E i. For multilayer and superlattice structures, the choice of E i value determines the layer composition and the switching periods control the individual layer thickness. [ABSTRACT FROM AUTHOR]
Copyright of Acta Materialia is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Abstract: The AlN incorporation probability in single crystal Hf1− x Al x N(001) layers is controllably adjusted between ∼0% and 100% by varying the ion energy (E i) incident at the growing film over a narrow range, 10–40eV. The layers are grown on MgO(001) at 450°C using ultrahigh vacuum magnetically unbalanced reactive magnetron sputtering from a Hf0.7Al0.3 alloy target in a 5%-N2/Ar atmosphere at a total pressure of 20mTorr (2.67Pa). The ion to metal flux ratio incident at the growing film is constant at 8. Epitaxial film compositions vary from x =0.30 with E i =10eV, to 0.27 with E i =20eV, 0.17 with E i =30eV, and ⩽0.002 with E i ⩾40eV. Thus, the AlN incorporation probability decreases by greater than two orders of magnitude. This extraordinary range in real-time manipulation of film chemistry during deposition is due to the efficient resputtering of deposited Al atoms (27 amu) by Ar+ ions (40 amu) neutralized and backscattered from heavy Hf atoms (178.5 amu) in the film. This provides a new reaction pathway to synthesize, at high deposition rates, compositionally complex heterostructures, multilayers, and superlattices with abrupt interfaces from a single alloy target by controllably switching E i. For multilayer and superlattice structures, the choice of E i value determines the layer composition and the switching periods control the individual layer thickness. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Acta Materialia is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.actamat.2010.08.023
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      – SubjectFull: Ion bombardment
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      – SubjectFull: Magnetron sputtering
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      – SubjectFull: Thin films
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      – SubjectFull: Magnesium oxide
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      – SubjectFull: Epitaxy
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      – TitleFull: Real-time control of AlN incorporation in epitaxial Hf1− x Al x N using high-flux, low-energy (10–40eV) ion bombardment during reactive magnetron sputter deposition from a Hf0.7Al0.3 alloy target
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