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Alternative resistive switching mechanism based on migration of charged counter-ions within conductive polymers

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Title: Alternative resistive switching mechanism based on migration of charged counter-ions within conductive polymers
Authors: Sim, R.1,2,3, Chan, M.Y.2, Wong, A.S.W.3, Lee, P.S.1 pslee@ntu.edu.sg
Source: Organic Electronics. Jan2011, Vol. 12 Issue 1, p185-189. 5p.
Subjects: Switching circuits, Electric conductivity, Electrodiffusion, Volatile organic compounds, Sulfonic acids, Polymeric composites, Electronic modulation, Energy dissipation, Ions
Abstract: Abstract: In this paper, an alternative bi-stable resistive switching mechanism for non-volatile organic memory applications is reported. The memory device is formed from a sandwiched structure of Au/polyaniline:poly(4-styrenesulfonic acid) (PANI:PSSH)/ITO and operates via the migration of negatively charged counter-ions (PSS−) within the polymer composite. The electro-statically bonded PSS− within the polymer film segregates at the polymer’s interface upon electrical biasing, serving to disrupt current conduction pathways through the polymer by influencing the resonance state of the conducting main chain. By relocation of this PSS− layer at the polymer interface, electrical conductivity was modulated and an electrical bi-stable device was achieved. The resistive ratio between the ON/OFF states of the device is about 2–3 orders of magnitude, both of which can be read out for up to 500 times with negligible degradation. [ABSTRACT FROM AUTHOR]
Copyright of Organic Electronics is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 57078224
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Alternative resistive switching mechanism based on migration of charged counter-ions within conductive polymers
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  Data: <searchLink fieldCode="AR" term="%22Sim%2C+R%2E%22">Sim, R.</searchLink><relatesTo>1,2,3</relatesTo><br /><searchLink fieldCode="AR" term="%22Chan%2C+M%2EY%2E%22">Chan, M.Y.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Wong%2C+A%2ES%2EW%2E%22">Wong, A.S.W.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Lee%2C+P%2ES%2E%22">Lee, P.S.</searchLink><relatesTo>1</relatesTo><i> pslee@ntu.edu.sg</i>
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  Data: <searchLink fieldCode="JN" term="%22Organic+Electronics%22">Organic Electronics</searchLink>. Jan2011, Vol. 12 Issue 1, p185-189. 5p.
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  Data: <searchLink fieldCode="DE" term="%22Switching+circuits%22">Switching circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+conductivity%22">Electric conductivity</searchLink><br /><searchLink fieldCode="DE" term="%22Electrodiffusion%22">Electrodiffusion</searchLink><br /><searchLink fieldCode="DE" term="%22Volatile+organic+compounds%22">Volatile organic compounds</searchLink><br /><searchLink fieldCode="DE" term="%22Sulfonic+acids%22">Sulfonic acids</searchLink><br /><searchLink fieldCode="DE" term="%22Polymeric+composites%22">Polymeric composites</searchLink><br /><searchLink fieldCode="DE" term="%22Electronic+modulation%22">Electronic modulation</searchLink><br /><searchLink fieldCode="DE" term="%22Energy+dissipation%22">Energy dissipation</searchLink><br /><searchLink fieldCode="DE" term="%22Ions%22">Ions</searchLink>
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  Data: Abstract: In this paper, an alternative bi-stable resistive switching mechanism for non-volatile organic memory applications is reported. The memory device is formed from a sandwiched structure of Au/polyaniline:poly(4-styrenesulfonic acid) (PANI:PSSH)/ITO and operates via the migration of negatively charged counter-ions (PSS−) within the polymer composite. The electro-statically bonded PSS− within the polymer film segregates at the polymer’s interface upon electrical biasing, serving to disrupt current conduction pathways through the polymer by influencing the resonance state of the conducting main chain. By relocation of this PSS− layer at the polymer interface, electrical conductivity was modulated and an electrical bi-stable device was achieved. The resistive ratio between the ON/OFF states of the device is about 2–3 orders of magnitude, both of which can be read out for up to 500 times with negligible degradation. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Organic Electronics is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.orgel.2010.11.003
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 185
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      – SubjectFull: Switching circuits
        Type: general
      – SubjectFull: Electric conductivity
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      – SubjectFull: Electrodiffusion
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      – SubjectFull: Volatile organic compounds
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      – SubjectFull: Sulfonic acids
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      – SubjectFull: Polymeric composites
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      – SubjectFull: Electronic modulation
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      – SubjectFull: Energy dissipation
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      – SubjectFull: Ions
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      – TitleFull: Alternative resistive switching mechanism based on migration of charged counter-ions within conductive polymers
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            NameFull: Chan, M.Y.
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              Text: Jan2011
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