APA (7th ed.) Citation

Nemcsics, Á., & Takács, J. (2011). Modeling of the hysteretic phenomena in RHEED intensity variation versus temperature for GaAs and InAs surfaces. Semiconductors, 45(1), 91. https://doi.org/10.1134/S1063782611010167

Chicago Style (17th ed.) Citation

Nemcsics, Ákos, and Jenö Takács. "Modeling of the Hysteretic Phenomena in RHEED Intensity Variation Versus Temperature for GaAs and InAs Surfaces." Semiconductors 45, no. 1 (2011): 91. https://doi.org/10.1134/S1063782611010167.

MLA (9th ed.) Citation

Nemcsics, Ákos, and Jenö Takács. "Modeling of the Hysteretic Phenomena in RHEED Intensity Variation Versus Temperature for GaAs and InAs Surfaces." Semiconductors, vol. 45, no. 1, 2011, p. 91, https://doi.org/10.1134/S1063782611010167.