Bibliographic Details
| Title: |
Modeling of the hysteretic phenomena in RHEED intensity variation versus temperature for GaAs and InAs surfaces. |
| Authors: |
Nemcsics, Ákos1 ncmcsics.akos@kvk.uni-obuda.hu, Takács, Jenö2 |
| Source: |
Semiconductors. Jan2011, Vol. 45 Issue 1, p91-95. 5p. |
| Subjects: |
Reflection high energy electron diffraction, Hysteresis, Temperature effect, Arsenides, Surfaces (Technology), Optical reflection, Prediction models |
| Abstract: |
This paper describes a study of the reflection high energy electron diffraction intensity change against temperature for GaAs and InAs surfaces. The reflection high energy electron diffraction intensity variation against temperature shows different hysteretic characters for the two materials. To date, the explanations for these phenomena were also different for the two substances. Here, we put forward an explanation for these hysteretic phenomena in general terms, applicable to both materials by using the hyperbolic model of hysteresis for coupled systems. Experimental results presented in the paper are in good agreement with the model predictions, supporting the proposed common explanation. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
