Modeling of the hysteretic phenomena in RHEED intensity variation versus temperature for GaAs and InAs surfaces.
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| Title: | Modeling of the hysteretic phenomena in RHEED intensity variation versus temperature for GaAs and InAs surfaces. |
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| Authors: | Nemcsics, Ákos1 ncmcsics.akos@kvk.uni-obuda.hu, Takács, Jenö2 |
| Source: | Semiconductors. Jan2011, Vol. 45 Issue 1, p91-95. 5p. |
| Subjects: | Reflection high energy electron diffraction, Hysteresis, Temperature effect, Arsenides, Surfaces (Technology), Optical reflection, Prediction models |
| Abstract: | This paper describes a study of the reflection high energy electron diffraction intensity change against temperature for GaAs and InAs surfaces. The reflection high energy electron diffraction intensity variation against temperature shows different hysteretic characters for the two materials. To date, the explanations for these phenomena were also different for the two substances. Here, we put forward an explanation for these hysteretic phenomena in general terms, applicable to both materials by using the hyperbolic model of hysteresis for coupled systems. Experimental results presented in the paper are in good agreement with the model predictions, supporting the proposed common explanation. [ABSTRACT FROM AUTHOR] |
| Copyright of Semiconductors is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Links: – Type: pdflink Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 58132757 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Modeling of the hysteretic phenomena in RHEED intensity variation versus temperature for GaAs and InAs surfaces. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Nemcsics%2C+Ákos%22">Nemcsics, Ákos</searchLink><relatesTo>1</relatesTo><i> ncmcsics.akos@kvk.uni-obuda.hu</i><br /><searchLink fieldCode="AR" term="%22Takács%2C+Jenö%22">Takács, Jenö</searchLink><relatesTo>2</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Semiconductors%22">Semiconductors</searchLink>. Jan2011, Vol. 45 Issue 1, p91-95. 5p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Reflection+high+energy+electron+diffraction%22">Reflection high energy electron diffraction</searchLink><br /><searchLink fieldCode="DE" term="%22Hysteresis%22">Hysteresis</searchLink><br /><searchLink fieldCode="DE" term="%22Temperature+effect%22">Temperature effect</searchLink><br /><searchLink fieldCode="DE" term="%22Arsenides%22">Arsenides</searchLink><br /><searchLink fieldCode="DE" term="%22Surfaces+%28Technology%29%22">Surfaces (Technology)</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+reflection%22">Optical reflection</searchLink><br /><searchLink fieldCode="DE" term="%22Prediction+models%22">Prediction models</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: This paper describes a study of the reflection high energy electron diffraction intensity change against temperature for GaAs and InAs surfaces. The reflection high energy electron diffraction intensity variation against temperature shows different hysteretic characters for the two materials. To date, the explanations for these phenomena were also different for the two substances. Here, we put forward an explanation for these hysteretic phenomena in general terms, applicable to both materials by using the hyperbolic model of hysteresis for coupled systems. Experimental results presented in the paper are in good agreement with the model predictions, supporting the proposed common explanation. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Semiconductors is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1134/S1063782611010167 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 5 StartPage: 91 Subjects: – SubjectFull: Reflection high energy electron diffraction Type: general – SubjectFull: Hysteresis Type: general – SubjectFull: Temperature effect Type: general – SubjectFull: Arsenides Type: general – SubjectFull: Surfaces (Technology) Type: general – SubjectFull: Optical reflection Type: general – SubjectFull: Prediction models Type: general Titles: – TitleFull: Modeling of the hysteretic phenomena in RHEED intensity variation versus temperature for GaAs and InAs surfaces. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Nemcsics, Ákos – PersonEntity: Name: NameFull: Takács, Jenö IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 01 Text: Jan2011 Type: published Y: 2011 Identifiers: – Type: issn-print Value: 10637826 Numbering: – Type: volume Value: 45 – Type: issue Value: 1 Titles: – TitleFull: Semiconductors Type: main |
| ResultId | 1 |
