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Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them.

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Title: Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them.
Authors: Tsatsulnikov, A. andrew@beam.ioffe.rssi.ru, Lundin, W., Zavarin, E., Nikolaev, A., Sakharov, A., Sizov, V., Usov, S., Musikhin, Yu., Gerthsen, D.
Source: Semiconductors. Feb2011, Vol. 45 Issue 2, p271-276. 6p.
Subjects: Phase separation method (Engineering), Hydrogen, Thin films, Light emitting diodes, Heterostructures, Indium compounds, Gallium
Abstract: Results of studies of hydrogen addition during the growth of thin (∼2-3 nm) InGaN layers on their structural properties and properties of light-emitting structures that contain InGaN/GaN heterostructures in the active region are reported. It is shown that, with the known effect of a decrease in the average content of In, hydrogen addition leads to varying the local phase separation in the InGaN layers. Hydrogen addition during the growth of the InGaN layers initially causes suppression of the local phase separation, while hydrogen addition during interruptions of the growth after deposition of the InGaN films leads to a decrease in the size of the formed local In-enriched regions and to a certain increase in the local content of the In atoms. [ABSTRACT FROM AUTHOR]
Copyright of Semiconductors is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  – Type: pdflink
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Header DbId: egs
DbLabel: Engineering Source
An: 58508585
AccessLevel: 6
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PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Tsatsulnikov%2C+A%2E%22">Tsatsulnikov, A.</searchLink><i> andrew@beam.ioffe.rssi.ru</i><br /><searchLink fieldCode="AR" term="%22Lundin%2C+W%2E%22">Lundin, W.</searchLink><br /><searchLink fieldCode="AR" term="%22Zavarin%2C+E%2E%22">Zavarin, E.</searchLink><br /><searchLink fieldCode="AR" term="%22Nikolaev%2C+A%2E%22">Nikolaev, A.</searchLink><br /><searchLink fieldCode="AR" term="%22Sakharov%2C+A%2E%22">Sakharov, A.</searchLink><br /><searchLink fieldCode="AR" term="%22Sizov%2C+V%2E%22">Sizov, V.</searchLink><br /><searchLink fieldCode="AR" term="%22Usov%2C+S%2E%22">Usov, S.</searchLink><br /><searchLink fieldCode="AR" term="%22Musikhin%2C+Yu%2E%22">Musikhin, Yu.</searchLink><br /><searchLink fieldCode="AR" term="%22Gerthsen%2C+D%2E%22">Gerthsen, D.</searchLink>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Semiconductors%22">Semiconductors</searchLink>. Feb2011, Vol. 45 Issue 2, p271-276. 6p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Phase+separation+method+%28Engineering%29%22">Phase separation method (Engineering)</searchLink><br /><searchLink fieldCode="DE" term="%22Hydrogen%22">Hydrogen</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Light+emitting+diodes%22">Light emitting diodes</searchLink><br /><searchLink fieldCode="DE" term="%22Heterostructures%22">Heterostructures</searchLink><br /><searchLink fieldCode="DE" term="%22Indium+compounds%22">Indium compounds</searchLink><br /><searchLink fieldCode="DE" term="%22Gallium%22">Gallium</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Results of studies of hydrogen addition during the growth of thin (∼2-3 nm) InGaN layers on their structural properties and properties of light-emitting structures that contain InGaN/GaN heterostructures in the active region are reported. It is shown that, with the known effect of a decrease in the average content of In, hydrogen addition leads to varying the local phase separation in the InGaN layers. Hydrogen addition during the growth of the InGaN layers initially causes suppression of the local phase separation, while hydrogen addition during interruptions of the growth after deposition of the InGaN films leads to a decrease in the size of the formed local In-enriched regions and to a certain increase in the local content of the In atoms. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Semiconductors is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1134/S1063782611020230
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 6
        StartPage: 271
    Subjects:
      – SubjectFull: Phase separation method (Engineering)
        Type: general
      – SubjectFull: Hydrogen
        Type: general
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Light emitting diodes
        Type: general
      – SubjectFull: Heterostructures
        Type: general
      – SubjectFull: Indium compounds
        Type: general
      – SubjectFull: Gallium
        Type: general
    Titles:
      – TitleFull: Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Tsatsulnikov, A.
      – PersonEntity:
          Name:
            NameFull: Lundin, W.
      – PersonEntity:
          Name:
            NameFull: Zavarin, E.
      – PersonEntity:
          Name:
            NameFull: Nikolaev, A.
      – PersonEntity:
          Name:
            NameFull: Sakharov, A.
      – PersonEntity:
          Name:
            NameFull: Sizov, V.
      – PersonEntity:
          Name:
            NameFull: Usov, S.
      – PersonEntity:
          Name:
            NameFull: Musikhin, Yu.
      – PersonEntity:
          Name:
            NameFull: Gerthsen, D.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 02
              Text: Feb2011
              Type: published
              Y: 2011
          Identifiers:
            – Type: issn-print
              Value: 10637826
          Numbering:
            – Type: volume
              Value: 45
            – Type: issue
              Value: 2
          Titles:
            – TitleFull: Semiconductors
              Type: main
ResultId 1