Bibliographic Details
| Title: |
A SiGe injection-locked-oscillator using HBT injector operated in saturation region. |
| Authors: |
Liu, Cheng-Chen1, Wang, Cheng-Cih1, Jang, Sheng-Lyang1, Juang, Miin-Horng1 |
| Source: |
Microwave & Optical Technology Letters. Apr2011, Vol. 53 Issue 4, p734-737. 4p. 3 Diagrams, 1 Chart, 5 Graphs. |
| Subjects: |
Radio frequency oscillators, Complementary metal oxide semiconductors, Heterojunctions, Bipolar transistors, Electric power consumption, Electric transformers |
| Abstract: |
This letter proposes a wide-locking range injection-locked frequency oscillator (ILO) fabricated in the 0.35 μm SiGe 3P3M BiCMOS technology. The divider consists of a hetero-junction bipolar transistor (HBT) cross-coupled LC oscillator and two injection HBTs in series with the cross-coupled HBTs. The HBT injectors and coupling transformers are regarded a voltage-to-voltage convection device to supply injection voltage to one port of mixer's input. At the supply voltage of 1.2 V, the free-running frequency is from 6.8 to 7.43 GHz, the current and power consumption of the divider without buffers are 9.4 mA and 11.28 mW, respectively. At the incident power of 0 dBm, the total operational locking range of the ILO used as a divide-by-3 frequency divider is from the incident frequency 20.3 to 23.1 GHz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:734-737, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25821 [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |