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A SiGe injection-locked-oscillator using HBT injector operated in saturation region.

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Title: A SiGe injection-locked-oscillator using HBT injector operated in saturation region.
Authors: Liu, Cheng-Chen1, Wang, Cheng-Cih1, Jang, Sheng-Lyang1, Juang, Miin-Horng1
Source: Microwave & Optical Technology Letters. Apr2011, Vol. 53 Issue 4, p734-737. 4p. 3 Diagrams, 1 Chart, 5 Graphs.
Subjects: Radio frequency oscillators, Complementary metal oxide semiconductors, Heterojunctions, Bipolar transistors, Electric power consumption, Electric transformers
Abstract: This letter proposes a wide-locking range injection-locked frequency oscillator (ILO) fabricated in the 0.35 μm SiGe 3P3M BiCMOS technology. The divider consists of a hetero-junction bipolar transistor (HBT) cross-coupled LC oscillator and two injection HBTs in series with the cross-coupled HBTs. The HBT injectors and coupling transformers are regarded a voltage-to-voltage convection device to supply injection voltage to one port of mixer's input. At the supply voltage of 1.2 V, the free-running frequency is from 6.8 to 7.43 GHz, the current and power consumption of the divider without buffers are 9.4 mA and 11.28 mW, respectively. At the incident power of 0 dBm, the total operational locking range of the ILO used as a divide-by-3 frequency divider is from the incident frequency 20.3 to 23.1 GHz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:734-737, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25821 [ABSTRACT FROM AUTHOR]
Copyright of Microwave & Optical Technology Letters is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: A SiGe injection-locked-oscillator using HBT injector operated in saturation region.
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  Data: <searchLink fieldCode="JN" term="%22Microwave+%26+Optical+Technology+Letters%22">Microwave & Optical Technology Letters</searchLink>. Apr2011, Vol. 53 Issue 4, p734-737. 4p. 3 Diagrams, 1 Chart, 5 Graphs.
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  Data: <searchLink fieldCode="DE" term="%22Radio+frequency+oscillators%22">Radio frequency oscillators</searchLink><br /><searchLink fieldCode="DE" term="%22Complementary+metal+oxide+semiconductors%22">Complementary metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Heterojunctions%22">Heterojunctions</searchLink><br /><searchLink fieldCode="DE" term="%22Bipolar+transistors%22">Bipolar transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+power+consumption%22">Electric power consumption</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+transformers%22">Electric transformers</searchLink>
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  Label: Abstract
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  Data: This letter proposes a wide-locking range injection-locked frequency oscillator (ILO) fabricated in the 0.35 μm SiGe 3P3M BiCMOS technology. The divider consists of a hetero-junction bipolar transistor (HBT) cross-coupled LC oscillator and two injection HBTs in series with the cross-coupled HBTs. The HBT injectors and coupling transformers are regarded a voltage-to-voltage convection device to supply injection voltage to one port of mixer's input. At the supply voltage of 1.2 V, the free-running frequency is from 6.8 to 7.43 GHz, the current and power consumption of the divider without buffers are 9.4 mA and 11.28 mW, respectively. At the incident power of 0 dBm, the total operational locking range of the ILO used as a divide-by-3 frequency divider is from the incident frequency 20.3 to 23.1 GHz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:734-737, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25821 [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Microwave & Optical Technology Letters is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – SubjectFull: Complementary metal oxide semiconductors
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      – SubjectFull: Heterojunctions
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              Text: Apr2011
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