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Static dissolution rate of tungsten film versus chemical adjustments of a reused slurry for chemical mechanical polishing

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Title: Static dissolution rate of tungsten film versus chemical adjustments of a reused slurry for chemical mechanical polishing
Authors: Coetsier, C.M.1, Testa, F.1,2, Carretier, E.1, Ennahali, M.2, Laborie, B.2, Mouton-arnaud, C.3, Fluchere, O.3, Moulin, P.1 philippe.moulin@univ-cezanne.fr
Source: Applied Surface Science. May2011, Vol. 257 Issue 14, p6163-6170. 8p.
Subjects: Chemical kinetics, Tungsten, Metallic films, Slurry, Grinding & polishing, Semiconductor wafers, Abrasion resistance, Hydrogen-ion concentration, Oxidation
Abstract: Abstract: Tungsten is widely used as deposited layer for the multi-level interconnection structures of wafers. The chemical composition of abrasive slurry plays an important role in chemical mechanical polishing (CMP) process. Removal of tungsten is driven by complex oxidation mechanisms between slurry components. The slurry for tungsten CMP generally contains oxidizer, iron catalyst, complexing agents and stabilizers in a pH adjusted solution of abrasive particles. Interaction between iron complex and H2O2 in the slurry is the main factor governing the chemical mode of material removal, oxidation potencies and kinetics. In this study, we investigate the effects of chemical additives in silica (SiO2)-based slurry on the removal rate of the tungsten film. Experiments were carried out in static batch as a preliminary study to understand and optimize chemical mechanisms in CMP–Tungsten process. Experiment designs were conducted to understand the influence of the chemical additives on the main performances of W–CMP. Used slurry, concentrated and retreated with chemical adjustments, is compared to the original slurry as a reference. [Copyright &y& Elsevier]
Copyright of Applied Surface Science is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Static dissolution rate of tungsten film versus chemical adjustments of a reused slurry for chemical mechanical polishing
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  Data: <searchLink fieldCode="AR" term="%22Coetsier%2C+C%2EM%2E%22">Coetsier, C.M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Testa%2C+F%2E%22">Testa, F.</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Carretier%2C+E%2E%22">Carretier, E.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Ennahali%2C+M%2E%22">Ennahali, M.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Laborie%2C+B%2E%22">Laborie, B.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Mouton-arnaud%2C+C%2E%22">Mouton-arnaud, C.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Fluchere%2C+O%2E%22">Fluchere, O.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Moulin%2C+P%2E%22">Moulin, P.</searchLink><relatesTo>1</relatesTo><i> philippe.moulin@univ-cezanne.fr</i>
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  Data: <searchLink fieldCode="JN" term="%22Applied+Surface+Science%22">Applied Surface Science</searchLink>. May2011, Vol. 257 Issue 14, p6163-6170. 8p.
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  Data: <searchLink fieldCode="DE" term="%22Chemical+kinetics%22">Chemical kinetics</searchLink><br /><searchLink fieldCode="DE" term="%22Tungsten%22">Tungsten</searchLink><br /><searchLink fieldCode="DE" term="%22Metallic+films%22">Metallic films</searchLink><br /><searchLink fieldCode="DE" term="%22Slurry%22">Slurry</searchLink><br /><searchLink fieldCode="DE" term="%22Grinding+%26+polishing%22">Grinding & polishing</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+wafers%22">Semiconductor wafers</searchLink><br /><searchLink fieldCode="DE" term="%22Abrasion+resistance%22">Abrasion resistance</searchLink><br /><searchLink fieldCode="DE" term="%22Hydrogen-ion+concentration%22">Hydrogen-ion concentration</searchLink><br /><searchLink fieldCode="DE" term="%22Oxidation%22">Oxidation</searchLink>
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  Data: Abstract: Tungsten is widely used as deposited layer for the multi-level interconnection structures of wafers. The chemical composition of abrasive slurry plays an important role in chemical mechanical polishing (CMP) process. Removal of tungsten is driven by complex oxidation mechanisms between slurry components. The slurry for tungsten CMP generally contains oxidizer, iron catalyst, complexing agents and stabilizers in a pH adjusted solution of abrasive particles. Interaction between iron complex and H2O2 in the slurry is the main factor governing the chemical mode of material removal, oxidation potencies and kinetics. In this study, we investigate the effects of chemical additives in silica (SiO2)-based slurry on the removal rate of the tungsten film. Experiments were carried out in static batch as a preliminary study to understand and optimize chemical mechanisms in CMP–Tungsten process. Experiment designs were conducted to understand the influence of the chemical additives on the main performances of W–CMP. Used slurry, concentrated and retreated with chemical adjustments, is compared to the original slurry as a reference. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Applied Surface Science is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.apsusc.2011.02.023
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      – Code: eng
        Text: English
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        PageCount: 8
        StartPage: 6163
    Subjects:
      – SubjectFull: Chemical kinetics
        Type: general
      – SubjectFull: Tungsten
        Type: general
      – SubjectFull: Metallic films
        Type: general
      – SubjectFull: Slurry
        Type: general
      – SubjectFull: Grinding & polishing
        Type: general
      – SubjectFull: Semiconductor wafers
        Type: general
      – SubjectFull: Abrasion resistance
        Type: general
      – SubjectFull: Hydrogen-ion concentration
        Type: general
      – SubjectFull: Oxidation
        Type: general
    Titles:
      – TitleFull: Static dissolution rate of tungsten film versus chemical adjustments of a reused slurry for chemical mechanical polishing
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            NameFull: Coetsier, C.M.
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              M: 05
              Text: May2011
              Type: published
              Y: 2011
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