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Effect of Fluorine Co-Implant on Boron Diffusion in Germanium Preamorphized Silicon During Post-LSA Rapid Thermal Annealing.

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Title: Effect of Fluorine Co-Implant on Boron Diffusion in Germanium Preamorphized Silicon During Post-LSA Rapid Thermal Annealing.
Authors: Poon, Chyiu Hyia1, See, Alex1
Source: IEEE Transactions on Semiconductor Manufacturing. 05/01/2011, Vol. 24 Issue 2, p333-337. 5p.
Subjects: Semiconductor diffusion, Rapid thermal processing, Fluorine, Boron, Semiconductor junctions, Ion implantation, Heat treatment of semiconductors, Germanium, Silicon
Abstract: Fluorine co-implant has been shown to reduce boron transient enhanced diffusion and deactivation when coupled with conventional spike rapid thermal anneals (RTA). For ultrashallow junction formation beyond the 45 nm technology node, non-melt laser spike anneal (LSA) is a promising diffusion-less annealing candidate. In this paper, the effect of fluorine co-implant on boron diffusion during LSA and the subsequent post-LSA thermal budget is evaluated. Silicon wafers were implanted with germanium, fluorine, and subsequently boron ions. Non-melt LSA was carried out at a temperature range from 1150 to 1350^\circC, followed by RTA at 825^\circC for 30 s. Secondary ion mass spectrometry confirms that in the presence of fluorine, retarded boron diffusion is observed at LSA temperatures below 1250^\circC. As the LSA temperature is increased or when a subsequent soak RTA is carried out, enhanced boron diffusion is observed. The reduced boron diffusivity at LSA temperatures below 1250^\circC is attributed to the efficient capture of interstitials released from the end-of-range defects by fluorine-vacancy clusters during the millisecond anneal. As the thermal budget is increased, excess interstitials caused by the fluorine implant are released, thus increasing the boron diffusion. [ABSTRACT FROM AUTHOR]
Copyright of IEEE Transactions on Semiconductor Manufacturing is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Effect of Fluorine Co-Implant on Boron Diffusion in Germanium Preamorphized Silicon During Post-LSA Rapid Thermal Annealing.
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  Data: <searchLink fieldCode="AR" term="%22Poon%2C+Chyiu+Hyia%22">Poon, Chyiu Hyia</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22See%2C+Alex%22">See, Alex</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="DE" term="%22Semiconductor+diffusion%22">Semiconductor diffusion</searchLink><br /><searchLink fieldCode="DE" term="%22Rapid+thermal+processing%22">Rapid thermal processing</searchLink><br /><searchLink fieldCode="DE" term="%22Fluorine%22">Fluorine</searchLink><br /><searchLink fieldCode="DE" term="%22Boron%22">Boron</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+junctions%22">Semiconductor junctions</searchLink><br /><searchLink fieldCode="DE" term="%22Ion+implantation%22">Ion implantation</searchLink><br /><searchLink fieldCode="DE" term="%22Heat+treatment+of+semiconductors%22">Heat treatment of semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Germanium%22">Germanium</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink>
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  Data: Fluorine co-implant has been shown to reduce boron transient enhanced diffusion and deactivation when coupled with conventional spike rapid thermal anneals (RTA). For ultrashallow junction formation beyond the 45 nm technology node, non-melt laser spike anneal (LSA) is a promising diffusion-less annealing candidate. In this paper, the effect of fluorine co-implant on boron diffusion during LSA and the subsequent post-LSA thermal budget is evaluated. Silicon wafers were implanted with germanium, fluorine, and subsequently boron ions. Non-melt LSA was carried out at a temperature range from 1150 to 1350^\circC, followed by RTA at 825^\circC for 30 s. Secondary ion mass spectrometry confirms that in the presence of fluorine, retarded boron diffusion is observed at LSA temperatures below 1250^\circC. As the LSA temperature is increased or when a subsequent soak RTA is carried out, enhanced boron diffusion is observed. The reduced boron diffusivity at LSA temperatures below 1250^\circC is attributed to the efficient capture of interstitials released from the end-of-range defects by fluorine-vacancy clusters during the millisecond anneal. As the thermal budget is increased, excess interstitials caused by the fluorine implant are released, thus increasing the boron diffusion. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of IEEE Transactions on Semiconductor Manufacturing is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1109/TSM.2011.2114371
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 5
        StartPage: 333
    Subjects:
      – SubjectFull: Semiconductor diffusion
        Type: general
      – SubjectFull: Rapid thermal processing
        Type: general
      – SubjectFull: Fluorine
        Type: general
      – SubjectFull: Boron
        Type: general
      – SubjectFull: Semiconductor junctions
        Type: general
      – SubjectFull: Ion implantation
        Type: general
      – SubjectFull: Heat treatment of semiconductors
        Type: general
      – SubjectFull: Germanium
        Type: general
      – SubjectFull: Silicon
        Type: general
    Titles:
      – TitleFull: Effect of Fluorine Co-Implant on Boron Diffusion in Germanium Preamorphized Silicon During Post-LSA Rapid Thermal Annealing.
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            NameFull: Poon, Chyiu Hyia
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            NameFull: See, Alex
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              M: 05
              Text: 05/01/2011
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              Y: 2011
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