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Controlled growth of InP/In0.48Ga0.52P quantum dots on GaAs substrate

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Title: Controlled growth of InP/In0.48Ga0.52P quantum dots on GaAs substrate
Authors: Ugur, A. ugur@physik.hu-berlin.de, Hatami, F.1, Masselink, W.T.1
Source: Journal of Crystal Growth. May2011, Vol. 323 Issue 1, p228-232. 5p.
Subjects: Molecular beam epitaxy, Quantum dots, Indium phosphide, Gallium arsenide, Optical properties of semiconductors, Nanostructured materials, Surfaces (Technology), Photoluminescence
Abstract: Abstract: Both the density and the ordering of InP quantum dots (QDs) grown on In0.48Ga0.52P/GaAs are controlled through the growth conditions. The control of the alignment of the QDs is achieved by determining the morphology of the In0.48Ga0.52P buffer through its growth temperature. For buffer layer growth temperatures near 470°C, an undulated surface results, which act as a template for QDs aligned along the undulation ridges. Lower buffer layer growth temperatures near 440°C result in smooth buffer layers and homogeneously distributed QDs; the density of the QDs is controlled by changing the growth rate of InP. Ultra-low density QDs are achieved (1dot per ) by reducing the InP growth rate down to 0.01ML/s. Micro-photoluminescence measurements reflect the low density of the QDs. Because InP/In0.48Ga0.52P QDs are promising photon sources for device applications with emission in the spectral window of highest Si-based detector efficiency, control of their ordering and density entirely through growth conditions aids in the development of a number of applications. [Copyright &y& Elsevier]
Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
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  Data: Controlled growth of InP/In<subscript>0.48</subscript>Ga<subscript>0.52</subscript>P quantum dots on GaAs substrate
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  Data: <searchLink fieldCode="AR" term="%22Ugur%2C+A%2E%22">Ugur, A.</searchLink><i> ugur@physik.hu-berlin.de</i><br /><searchLink fieldCode="AR" term="%22Hatami%2C+F%2E%22">Hatami, F.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Masselink%2C+W%2ET%2E%22">Masselink, W.T.</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Crystal+Growth%22">Journal of Crystal Growth</searchLink>. May2011, Vol. 323 Issue 1, p228-232. 5p.
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  Data: <searchLink fieldCode="DE" term="%22Molecular+beam+epitaxy%22">Molecular beam epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Quantum+dots%22">Quantum dots</searchLink><br /><searchLink fieldCode="DE" term="%22Indium+phosphide%22">Indium phosphide</searchLink><br /><searchLink fieldCode="DE" term="%22Gallium+arsenide%22">Gallium arsenide</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+properties+of+semiconductors%22">Optical properties of semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Nanostructured+materials%22">Nanostructured materials</searchLink><br /><searchLink fieldCode="DE" term="%22Surfaces+%28Technology%29%22">Surfaces (Technology)</searchLink><br /><searchLink fieldCode="DE" term="%22Photoluminescence%22">Photoluminescence</searchLink>
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  Data: Abstract: Both the density and the ordering of InP quantum dots (QDs) grown on In0.48Ga0.52P/GaAs are controlled through the growth conditions. The control of the alignment of the QDs is achieved by determining the morphology of the In0.48Ga0.52P buffer through its growth temperature. For buffer layer growth temperatures near 470°C, an undulated surface results, which act as a template for QDs aligned along the undulation ridges. Lower buffer layer growth temperatures near 440°C result in smooth buffer layers and homogeneously distributed QDs; the density of the QDs is controlled by changing the growth rate of InP. Ultra-low density QDs are achieved (1dot per ) by reducing the InP growth rate down to 0.01ML/s. Micro-photoluminescence measurements reflect the low density of the QDs. Because InP/In0.48Ga0.52P QDs are promising photon sources for device applications with emission in the spectral window of highest Si-based detector efficiency, control of their ordering and density entirely through growth conditions aids in the development of a number of applications. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.jcrysgro.2011.01.033
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        Text: English
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        Type: general
      – SubjectFull: Quantum dots
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      – SubjectFull: Indium phosphide
        Type: general
      – SubjectFull: Gallium arsenide
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      – SubjectFull: Optical properties of semiconductors
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      – SubjectFull: Nanostructured materials
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      – SubjectFull: Surfaces (Technology)
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      – SubjectFull: Photoluminescence
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      – TitleFull: Controlled growth of InP/In0.48Ga0.52P quantum dots on GaAs substrate
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              Text: May2011
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