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Three-interface pseudo-MOSFET models for the characterization of SOI wafers with ultrathin film and BOX

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Title: Three-interface pseudo-MOSFET models for the characterization of SOI wafers with ultrathin film and BOX
Authors: Rodriguez, Noel1 noel@ugr.es, Cristoloveanu, Sorin2, Maqueda, Mariazel1, Gámiz, Francisco1, Allibert, Frederic3
Source: Microelectronic Engineering. Jul2011, Vol. 88 Issue 7, p1236-1239. 4p.
Subjects: Metal oxide semiconductor field-effect transistors, Silicon-on-insulator technology, Poisson's equation, Interfaces (Physical sciences), Semiconductor wafers, Thin films, Electric potential, Mathematical models
Abstract: Abstract: The electrical characterization of unprocessed fully depleted silicon-on-insulator (SOI) layers relies on the pseudo-MOSFET (Ψ-MOSFET) technique. We propose three-interface models which are more appropriate for addressing the case of SOI wafers with ultrathin body and BOX (UTB2). The novel models for threshold voltage and subthreshold swing account for the channel-to-surface and channel-to-substrate coupling which are important effects, respectively, in ultrathin films and thin BOX. The influence of the density of traps at each of the three interfaces (free surface, channel/BOX and BOX/substrate) is discussed. The models are validated with experimental results from a range of SOI film thicknesses. [Copyright &y& Elsevier]
Copyright of Microelectronic Engineering is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 61171566
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PubTypeId: academicJournal
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  Data: Three-interface pseudo-MOSFET models for the characterization of SOI wafers with ultrathin film and BOX
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  Data: <searchLink fieldCode="AR" term="%22Rodriguez%2C+Noel%22">Rodriguez, Noel</searchLink><relatesTo>1</relatesTo><i> noel@ugr.es</i><br /><searchLink fieldCode="AR" term="%22Cristoloveanu%2C+Sorin%22">Cristoloveanu, Sorin</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Maqueda%2C+Mariazel%22">Maqueda, Mariazel</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Gámiz%2C+Francisco%22">Gámiz, Francisco</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Allibert%2C+Frederic%22">Allibert, Frederic</searchLink><relatesTo>3</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Microelectronic+Engineering%22">Microelectronic Engineering</searchLink>. Jul2011, Vol. 88 Issue 7, p1236-1239. 4p.
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  Data: <searchLink fieldCode="DE" term="%22Metal+oxide+semiconductor+field-effect+transistors%22">Metal oxide semiconductor field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon-on-insulator+technology%22">Silicon-on-insulator technology</searchLink><br /><searchLink fieldCode="DE" term="%22Poisson's+equation%22">Poisson's equation</searchLink><br /><searchLink fieldCode="DE" term="%22Interfaces+%28Physical+sciences%29%22">Interfaces (Physical sciences)</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+wafers%22">Semiconductor wafers</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+potential%22">Electric potential</searchLink><br /><searchLink fieldCode="DE" term="%22Mathematical+models%22">Mathematical models</searchLink>
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  Data: Abstract: The electrical characterization of unprocessed fully depleted silicon-on-insulator (SOI) layers relies on the pseudo-MOSFET (Ψ-MOSFET) technique. We propose three-interface models which are more appropriate for addressing the case of SOI wafers with ultrathin body and BOX (UTB2). The novel models for threshold voltage and subthreshold swing account for the channel-to-surface and channel-to-substrate coupling which are important effects, respectively, in ultrathin films and thin BOX. The influence of the density of traps at each of the three interfaces (free surface, channel/BOX and BOX/substrate) is discussed. The models are validated with experimental results from a range of SOI film thicknesses. [Copyright &y& Elsevier]
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  Data: <i>Copyright of Microelectronic Engineering is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.mee.2011.03.082
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      – Code: eng
        Text: English
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      – SubjectFull: Metal oxide semiconductor field-effect transistors
        Type: general
      – SubjectFull: Silicon-on-insulator technology
        Type: general
      – SubjectFull: Poisson's equation
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      – SubjectFull: Interfaces (Physical sciences)
        Type: general
      – SubjectFull: Semiconductor wafers
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      – SubjectFull: Thin films
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      – SubjectFull: Electric potential
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      – SubjectFull: Mathematical models
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      – TitleFull: Three-interface pseudo-MOSFET models for the characterization of SOI wafers with ultrathin film and BOX
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            NameFull: Rodriguez, Noel
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            NameFull: Cristoloveanu, Sorin
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            NameFull: Maqueda, Mariazel
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            NameFull: Gámiz, Francisco
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              M: 07
              Text: Jul2011
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              Y: 2011
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