Bibliographic Details
| Title: |
Enhanced operation and retention characteristics in charge-trapping flash memory device with a novel Si/Ge super-lattice channel |
| Authors: |
Liu, Li-Jung1, Chang-Liao, Kuei-Shu Lkschang@ess.nthu.edu.tw, Jian, Yi-Chuen1, Wang, Tien-Ko1 |
| Source: |
Microelectronic Engineering. Jul2011, Vol. 88 Issue 7, p1159-1163. 5p. |
| Subjects: |
Flash memory, Ion traps, Germanium, Quantum tunneling, Oxides, Electric charge, Silicon, Superlattices |
| Abstract: |
Abstract: Charge-trapping flash memory devices with super-lattice channels having different stacking structures and thicknesses of Ge top-layer are investigated in this work. Both programming and erasing speeds are significantly improved for devices with super-lattice channels. Programming speed increases with increasing thickness of Ge layer in the super-lattice channel. The enhancement on programming speed can be achieved up to 40 times or better. For devices with Ge top-layer on super-lattice channel, a further enhancement is observed with increasing Ge thickness. The retention characteristic of devices with super-lattice channel is better than that with Si-channel devices owing to the slightly increased thickness of tunneling oxide. [Copyright &y& Elsevier] |
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| Database: |
Engineering Source |
