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Enhanced operation and retention characteristics in charge-trapping flash memory device with a novel Si/Ge super-lattice channel

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Title: Enhanced operation and retention characteristics in charge-trapping flash memory device with a novel Si/Ge super-lattice channel
Authors: Liu, Li-Jung1, Chang-Liao, Kuei-Shu Lkschang@ess.nthu.edu.tw, Jian, Yi-Chuen1, Wang, Tien-Ko1
Source: Microelectronic Engineering. Jul2011, Vol. 88 Issue 7, p1159-1163. 5p.
Subjects: Flash memory, Ion traps, Germanium, Quantum tunneling, Oxides, Electric charge, Silicon, Superlattices
Abstract: Abstract: Charge-trapping flash memory devices with super-lattice channels having different stacking structures and thicknesses of Ge top-layer are investigated in this work. Both programming and erasing speeds are significantly improved for devices with super-lattice channels. Programming speed increases with increasing thickness of Ge layer in the super-lattice channel. The enhancement on programming speed can be achieved up to 40 times or better. For devices with Ge top-layer on super-lattice channel, a further enhancement is observed with increasing Ge thickness. The retention characteristic of devices with super-lattice channel is better than that with Si-channel devices owing to the slightly increased thickness of tunneling oxide. [Copyright &y& Elsevier]
Copyright of Microelectronic Engineering is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 61171586
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Enhanced operation and retention characteristics in charge-trapping flash memory device with a novel Si/Ge super-lattice channel
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  Data: <searchLink fieldCode="AR" term="%22Liu%2C+Li-Jung%22">Liu, Li-Jung</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Chang-Liao%2C+Kuei-Shu%22">Chang-Liao, Kuei-Shu</searchLink><i> Lkschang@ess.nthu.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Jian%2C+Yi-Chuen%22">Jian, Yi-Chuen</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Wang%2C+Tien-Ko%22">Wang, Tien-Ko</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Microelectronic+Engineering%22">Microelectronic Engineering</searchLink>. Jul2011, Vol. 88 Issue 7, p1159-1163. 5p.
– Name: Subject
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  Data: <searchLink fieldCode="DE" term="%22Flash+memory%22">Flash memory</searchLink><br /><searchLink fieldCode="DE" term="%22Ion+traps%22">Ion traps</searchLink><br /><searchLink fieldCode="DE" term="%22Germanium%22">Germanium</searchLink><br /><searchLink fieldCode="DE" term="%22Quantum+tunneling%22">Quantum tunneling</searchLink><br /><searchLink fieldCode="DE" term="%22Oxides%22">Oxides</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+charge%22">Electric charge</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Superlattices%22">Superlattices</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Abstract: Charge-trapping flash memory devices with super-lattice channels having different stacking structures and thicknesses of Ge top-layer are investigated in this work. Both programming and erasing speeds are significantly improved for devices with super-lattice channels. Programming speed increases with increasing thickness of Ge layer in the super-lattice channel. The enhancement on programming speed can be achieved up to 40 times or better. For devices with Ge top-layer on super-lattice channel, a further enhancement is observed with increasing Ge thickness. The retention characteristic of devices with super-lattice channel is better than that with Si-channel devices owing to the slightly increased thickness of tunneling oxide. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Microelectronic Engineering is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.mee.2011.03.131
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 5
        StartPage: 1159
    Subjects:
      – SubjectFull: Flash memory
        Type: general
      – SubjectFull: Ion traps
        Type: general
      – SubjectFull: Germanium
        Type: general
      – SubjectFull: Quantum tunneling
        Type: general
      – SubjectFull: Oxides
        Type: general
      – SubjectFull: Electric charge
        Type: general
      – SubjectFull: Silicon
        Type: general
      – SubjectFull: Superlattices
        Type: general
    Titles:
      – TitleFull: Enhanced operation and retention characteristics in charge-trapping flash memory device with a novel Si/Ge super-lattice channel
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            NameFull: Liu, Li-Jung
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            NameFull: Jian, Yi-Chuen
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            NameFull: Wang, Tien-Ko
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            – D: 01
              M: 07
              Text: Jul2011
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              Y: 2011
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