Macrosegregation in vertical Bridgman grown Ge1−x Si x alloy with large melt volume: Limit of complete mixing

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Title: Macrosegregation in vertical Bridgman grown Ge1−x Si x alloy with large melt volume: Limit of complete mixing
Authors: Woodacre, J.K.1, Labrie, D.1 daniel.labrie@dal.ca, Saghir, M.Z.2
Source: Journal of Crystal Growth. Jul2011, Vol. 327 Issue 1, p35-41. 7p.
Subjects: Metallurgical segregation, Crystal growth, Germanium alloys, Mixing, Phase diagrams, Solidification, Semiconductors, Buoyant convection
Abstract: Abstract: Vertical Bridgman growth of GeSi alloy with an average Si composition of 15atom% was performed on a large 25mm diameter by 90mm long melt volume to significantly increase the buoyancy-driven convection within the melt. For one sample, the longitudinal Si composition along the sample length is described by a simple one-dimensional model including complete mixing of the Ge and Si melt constituents and the equilibrium Si segregation coefficient given by the GeSi phase diagram. The excellent agreement between theory and experiment shows that the GeSi phase diagram in the Ge-rich region is determined accurately. [Copyright &y& Elsevier]
Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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An: 62557812
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Macrosegregation in vertical Bridgman grown Ge<subscript>1−x </subscript>Si<subscript> x </subscript> alloy with large melt volume: Limit of complete mixing
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Woodacre%2C+J%2EK%2E%22">Woodacre, J.K.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Labrie%2C+D%2E%22">Labrie, D.</searchLink><relatesTo>1</relatesTo><i> daniel.labrie@dal.ca</i><br /><searchLink fieldCode="AR" term="%22Saghir%2C+M%2EZ%2E%22">Saghir, M.Z.</searchLink><relatesTo>2</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Crystal+Growth%22">Journal of Crystal Growth</searchLink>. Jul2011, Vol. 327 Issue 1, p35-41. 7p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Metallurgical+segregation%22">Metallurgical segregation</searchLink><br /><searchLink fieldCode="DE" term="%22Crystal+growth%22">Crystal growth</searchLink><br /><searchLink fieldCode="DE" term="%22Germanium+alloys%22">Germanium alloys</searchLink><br /><searchLink fieldCode="DE" term="%22Mixing%22">Mixing</searchLink><br /><searchLink fieldCode="DE" term="%22Phase+diagrams%22">Phase diagrams</searchLink><br /><searchLink fieldCode="DE" term="%22Solidification%22">Solidification</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductors%22">Semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Buoyant+convection%22">Buoyant convection</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Abstract: Vertical Bridgman growth of GeSi alloy with an average Si composition of 15atom% was performed on a large 25mm diameter by 90mm long melt volume to significantly increase the buoyancy-driven convection within the melt. For one sample, the longitudinal Si composition along the sample length is described by a simple one-dimensional model including complete mixing of the Ge and Si melt constituents and the equilibrium Si segregation coefficient given by the GeSi phase diagram. The excellent agreement between theory and experiment shows that the GeSi phase diagram in the Ge-rich region is determined accurately. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.jcrysgro.2011.06.019
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 7
        StartPage: 35
    Subjects:
      – SubjectFull: Metallurgical segregation
        Type: general
      – SubjectFull: Crystal growth
        Type: general
      – SubjectFull: Germanium alloys
        Type: general
      – SubjectFull: Mixing
        Type: general
      – SubjectFull: Phase diagrams
        Type: general
      – SubjectFull: Solidification
        Type: general
      – SubjectFull: Semiconductors
        Type: general
      – SubjectFull: Buoyant convection
        Type: general
    Titles:
      – TitleFull: Macrosegregation in vertical Bridgman grown Ge1−x Si x alloy with large melt volume: Limit of complete mixing
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Woodacre, J.K.
      – PersonEntity:
          Name:
            NameFull: Labrie, D.
      – PersonEntity:
          Name:
            NameFull: Saghir, M.Z.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 15
              M: 07
              Text: Jul2011
              Type: published
              Y: 2011
          Identifiers:
            – Type: issn-print
              Value: 00220248
          Numbering:
            – Type: volume
              Value: 327
            – Type: issue
              Value: 1
          Titles:
            – TitleFull: Journal of Crystal Growth
              Type: main
ResultId 1