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Hot Wire Chemical Vapor Deposition of Ge2Sb2Te5 Thin Films.

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Title: Hot Wire Chemical Vapor Deposition of Ge2Sb2Te5 Thin Films.
Authors: Reso, D.1, Silinskas, M.1 mindaugas.silinskas@ovgu.de, Kalkofen, B.1, Lisker, M.2, Burte, E. P.1
Source: Journal of The Electrochemical Society. 2011, Vol. 158 Issue 3, pD187-D190. 4p.
Subjects: Chemical vapor deposition, Thin films, Germanium, Antimony, Tellurium
Abstract: Germanium-antimony-telluride or, particularly, Ge2Sb2Te5 (GST) thin films were deposited by hot wire (HW) chemical vapor deposition (CVD). Tetraallylgermanium, triisopropylantimony, and diisopropyltelluride were used as precursors for germanium, antimony, and tellurium, respectively. The influence of deposition parameters, such as temperature, pressure, and hydrogen content, was investigated. It was found that higher temperature, higher pressure, and lower hydrogen flow yielded higher growth rates of the films. An admixture of hydrogen reduced the Te concentration in the GST thin films and enhanced the content of Ge and Sb. The chemical composition could also be altered by other deposition parameters but these dependencies were not as well pronounced as in the hydrogen case. Generally, a higher Ge concentration was related to a smaller amount of Te. The films deposited at a higher pressure showed a significantly higher roughness. In addition, the switching from a low to high resistivity state was tested. [ABSTRACT FROM AUTHOR]
Copyright of Journal of The Electrochemical Society is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 63018873
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Hot Wire Chemical Vapor Deposition of Ge<subscript>2</subscript>Sb<subscript>2</subscript>Te<subscript>5</subscript> Thin Films.
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  Data: <searchLink fieldCode="AR" term="%22Reso%2C+D%2E%22">Reso, D.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Silinskas%2C+M%2E%22">Silinskas, M.</searchLink><relatesTo>1</relatesTo><i> mindaugas.silinskas@ovgu.de</i><br /><searchLink fieldCode="AR" term="%22Kalkofen%2C+B%2E%22">Kalkofen, B.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Lisker%2C+M%2E%22">Lisker, M.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Burte%2C+E%2E+P%2E%22">Burte, E. P.</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+The+Electrochemical+Society%22">Journal of The Electrochemical Society</searchLink>. 2011, Vol. 158 Issue 3, pD187-D190. 4p.
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  Data: <searchLink fieldCode="DE" term="%22Chemical+vapor+deposition%22">Chemical vapor deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Germanium%22">Germanium</searchLink><br /><searchLink fieldCode="DE" term="%22Antimony%22">Antimony</searchLink><br /><searchLink fieldCode="DE" term="%22Tellurium%22">Tellurium</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: Germanium-antimony-telluride or, particularly, Ge2Sb2Te5 (GST) thin films were deposited by hot wire (HW) chemical vapor deposition (CVD). Tetraallylgermanium, triisopropylantimony, and diisopropyltelluride were used as precursors for germanium, antimony, and tellurium, respectively. The influence of deposition parameters, such as temperature, pressure, and hydrogen content, was investigated. It was found that higher temperature, higher pressure, and lower hydrogen flow yielded higher growth rates of the films. An admixture of hydrogen reduced the Te concentration in the GST thin films and enhanced the content of Ge and Sb. The chemical composition could also be altered by other deposition parameters but these dependencies were not as well pronounced as in the hydrogen case. Generally, a higher Ge concentration was related to a smaller amount of Te. The films deposited at a higher pressure showed a significantly higher roughness. In addition, the switching from a low to high resistivity state was tested. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Journal of The Electrochemical Society is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1149/1.3543716
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: D187
    Subjects:
      – SubjectFull: Chemical vapor deposition
        Type: general
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Germanium
        Type: general
      – SubjectFull: Antimony
        Type: general
      – SubjectFull: Tellurium
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            NameFull: Lisker, M.
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            NameFull: Burte, E. P.
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              Text: 2011
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