Nanoscale volume diffusion.
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| Title: | Nanoscale volume diffusion. |
|---|---|
| Authors: | Erdélyi, Zoltán1 zerdelyi@dragon.unideb.hu, Beke, Dezső L.1 |
| Source: | Journal of Materials Science. Oct2011, Vol. 46 Issue 20, p6465-6483. 19p. 1 Black and White Photograph, 3 Diagrams, 21 Graphs. |
| Subjects: | Semiconductor diffusion, Amorphous semiconductors, Kirkendall effect, X-ray spectroscopy, Thin films, Nanoparticles |
| Abstract: | Diffusion on the nano/atomic scales in multilayers, thin films has many challenging features even if the role of structural defects (grain-boundaries, dislocations, etc.) can be neglected and 'only' the effects related to the nano/atomic scale raise. This can be the case for diffusion in amorphous materials, in epitaxial, highly ideal thin films, or multilayers where diffusion along short circuits can be ignored and 'only' fundamental difficulties related to nanoscale effects are important. The objective of this article is to review some interesting fundamental experimental and theoretical results in the field of nanoscale volume diffusion in planar and spherical geometries. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Materials Science is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Links: – Type: pdflink Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 63165920 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Nanoscale volume diffusion. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Erdélyi%2C+Zoltán%22">Erdélyi, Zoltán</searchLink><relatesTo>1</relatesTo><i> zerdelyi@dragon.unideb.hu</i><br /><searchLink fieldCode="AR" term="%22Beke%2C+Dezső+L%2E%22">Beke, Dezső L.</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%22">Journal of Materials Science</searchLink>. Oct2011, Vol. 46 Issue 20, p6465-6483. 19p. 1 Black and White Photograph, 3 Diagrams, 21 Graphs. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Semiconductor+diffusion%22">Semiconductor diffusion</searchLink><br /><searchLink fieldCode="DE" term="%22Amorphous+semiconductors%22">Amorphous semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Kirkendall+effect%22">Kirkendall effect</searchLink><br /><searchLink fieldCode="DE" term="%22X-ray+spectroscopy%22">X-ray spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Nanoparticles%22">Nanoparticles</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Diffusion on the nano/atomic scales in multilayers, thin films has many challenging features even if the role of structural defects (grain-boundaries, dislocations, etc.) can be neglected and 'only' the effects related to the nano/atomic scale raise. This can be the case for diffusion in amorphous materials, in epitaxial, highly ideal thin films, or multilayers where diffusion along short circuits can be ignored and 'only' fundamental difficulties related to nanoscale effects are important. The objective of this article is to review some interesting fundamental experimental and theoretical results in the field of nanoscale volume diffusion in planar and spherical geometries. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Materials Science is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s10853-011-5720-4 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 19 StartPage: 6465 Subjects: – SubjectFull: Semiconductor diffusion Type: general – SubjectFull: Amorphous semiconductors Type: general – SubjectFull: Kirkendall effect Type: general – SubjectFull: X-ray spectroscopy Type: general – SubjectFull: Thin films Type: general – SubjectFull: Nanoparticles Type: general Titles: – TitleFull: Nanoscale volume diffusion. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Erdélyi, Zoltán – PersonEntity: Name: NameFull: Beke, Dezső L. IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 10 Text: Oct2011 Type: published Y: 2011 Identifiers: – Type: issn-print Value: 00222461 Numbering: – Type: volume Value: 46 – Type: issue Value: 20 Titles: – TitleFull: Journal of Materials Science Type: main |
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