Avalanche multiplication in GaInP/GaAs single...
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| Title: | Avalanche multiplication in GaInP/GaAs single... |
|---|---|
| Authors: | Flitcroft, Richard M., David, John P.R., Houston, Peter A., Button, Christopher C. |
| Source: | IEEE Transactions on Electron Devices. Jun98, Vol. 45 Issue 6, p1207. 6p. 3 Black and White Photographs, 1 Chart, 6 Graphs. |
| Subjects: | Photoelectric measurements, Bipolar transistors |
| Abstract: | Provides information on a study which demonstrated the measurement of the electron multiplication factors in gallium-indium-phosphorus/gallium-arsenic (GaInP/GaAs) single heterojunction bipolar transistors (HBT) as a function of base-collector bias for a range of GaAs collector doping densities. Introduction on HBT; Discussion on the reduction in multiplication at low electric fields; Proposal for a simple correction for the dead space; Conclusion. |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 631770 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Avalanche multiplication in GaInP/GaAs single... – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Flitcroft%2C+Richard+M%2E%22">Flitcroft, Richard M.</searchLink><br /><searchLink fieldCode="AR" term="%22David%2C+John+P%2ER%2E%22">David, John P.R.</searchLink><br /><searchLink fieldCode="AR" term="%22Houston%2C+Peter+A%2E%22">Houston, Peter A.</searchLink><br /><searchLink fieldCode="AR" term="%22Button%2C+Christopher+C%2E%22">Button, Christopher C.</searchLink> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Electron+Devices%22">IEEE Transactions on Electron Devices</searchLink>. Jun98, Vol. 45 Issue 6, p1207. 6p. 3 Black and White Photographs, 1 Chart, 6 Graphs. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Photoelectric+measurements%22">Photoelectric measurements</searchLink><br /><searchLink fieldCode="DE" term="%22Bipolar+transistors%22">Bipolar transistors</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Provides information on a study which demonstrated the measurement of the electron multiplication factors in gallium-indium-phosphorus/gallium-arsenic (GaInP/GaAs) single heterojunction bipolar transistors (HBT) as a function of base-collector bias for a range of GaAs collector doping densities. Introduction on HBT; Discussion on the reduction in multiplication at low electric fields; Proposal for a simple correction for the dead space; Conclusion. |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=631770 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/16.678515 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 6 StartPage: 1207 Subjects: – SubjectFull: Photoelectric measurements Type: general – SubjectFull: Bipolar transistors Type: general Titles: – TitleFull: Avalanche multiplication in GaInP/GaAs single... Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Flitcroft, Richard M. – PersonEntity: Name: NameFull: David, John P.R. – PersonEntity: Name: NameFull: Houston, Peter A. – PersonEntity: Name: NameFull: Button, Christopher C. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 06 Text: Jun98 Type: published Y: 1998 Identifiers: – Type: issn-print Value: 00189383 Numbering: – Type: volume Value: 45 – Type: issue Value: 6 Titles: – TitleFull: IEEE Transactions on Electron Devices Type: main |
| ResultId | 1 |
