Bibliographic Details
| Title: |
Avalanche multiplication in GaInP/GaAs single... |
| Authors: |
Flitcroft, Richard M., David, John P.R., Houston, Peter A., Button, Christopher C. |
| Source: |
IEEE Transactions on Electron Devices. Jun98, Vol. 45 Issue 6, p1207. 6p. 3 Black and White Photographs, 1 Chart, 6 Graphs. |
| Subjects: |
Photoelectric measurements, Bipolar transistors |
| Abstract: |
Provides information on a study which demonstrated the measurement of the electron multiplication factors in gallium-indium-phosphorus/gallium-arsenic (GaInP/GaAs) single heterojunction bipolar transistors (HBT) as a function of base-collector bias for a range of GaAs collector doping densities. Introduction on HBT; Discussion on the reduction in multiplication at low electric fields; Proposal for a simple correction for the dead space; Conclusion. |
| Database: |
Engineering Source |
