Highly-linear rail-to-rail 1.2 V-0.18 µm CMOS V-I converter.
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| Title: | Highly-linear rail-to-rail 1.2 V-0.18 µm CMOS V-I converter. |
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| Authors: | Azcona, C.1, Calvo, B.1 becalvo@unizar.es, Celma, S.1, Medrano, N.1 |
| Source: | Electronics Letters (Institution of Engineering & Technology). 9/1/2011, Vol. 47 Issue 18, p1018-1019. 2p. 1 Diagram, 1 Chart, 1 Graph. |
| Subjects: | Complementary metal oxide semiconductors, Electric potential, Bandwidths, Electric power consumption, Electric resistors |
| Abstract: | Presented is a new high-performance CMOS V-I converter based on an OTA/common source amplifier configuration. To achieve rail-to-rail operation, the voltage across the linear V-I conversion resistor is reduced by means of local feedback, thereby keeping the output mirroring transistor in saturation over the entire input voltage range. Experimental results for a 1.2 V-0.18 µm CMOS design confirm rail-to-rail operation with transconductance gain errors below 2.2 % over a -40 to +120°C range, THD below -52 dB for a 100 kHz-1 Vpp input signal and bandwidth above 14 MHz with 70 µW power consumption and 100×112 µm2 active area. [ABSTRACT FROM AUTHOR] |
| Copyright of Electronics Letters (Institution of Engineering & Technology) is the property of Institution of Engineering & Technology and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 65109009 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Highly-linear rail-to-rail 1.2 V-0.18 µm CMOS V-I converter. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Azcona%2C+C%2E%22">Azcona, C.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Calvo%2C+B%2E%22">Calvo, B.</searchLink><relatesTo>1</relatesTo><i> becalvo@unizar.es</i><br /><searchLink fieldCode="AR" term="%22Celma%2C+S%2E%22">Celma, S.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Medrano%2C+N%2E%22">Medrano, N.</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Electronics+Letters+%28Institution+of+Engineering+%26+Technology%29%22">Electronics Letters (Institution of Engineering & Technology)</searchLink>. 9/1/2011, Vol. 47 Issue 18, p1018-1019. 2p. 1 Diagram, 1 Chart, 1 Graph. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Complementary+metal+oxide+semiconductors%22">Complementary metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+potential%22">Electric potential</searchLink><br /><searchLink fieldCode="DE" term="%22Bandwidths%22">Bandwidths</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+power+consumption%22">Electric power consumption</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+resistors%22">Electric resistors</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Presented is a new high-performance CMOS V-I converter based on an OTA/common source amplifier configuration. To achieve rail-to-rail operation, the voltage across the linear V-I conversion resistor is reduced by means of local feedback, thereby keeping the output mirroring transistor in saturation over the entire input voltage range. Experimental results for a 1.2 V-0.18 µm CMOS design confirm rail-to-rail operation with transconductance gain errors below 2.2 % over a -40 to +120°C range, THD below -52 dB for a 100 kHz-1 Vpp input signal and bandwidth above 14 MHz with 70 µW power consumption and 100×112 µm2 active area. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Electronics Letters (Institution of Engineering & Technology) is the property of Institution of Engineering & Technology and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1049/el.2011.2053 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 2 StartPage: 1018 Subjects: – SubjectFull: Complementary metal oxide semiconductors Type: general – SubjectFull: Electric potential Type: general – SubjectFull: Bandwidths Type: general – SubjectFull: Electric power consumption Type: general – SubjectFull: Electric resistors Type: general Titles: – TitleFull: Highly-linear rail-to-rail 1.2 V-0.18 µm CMOS V-I converter. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Azcona, C. – PersonEntity: Name: NameFull: Calvo, B. – PersonEntity: Name: NameFull: Celma, S. – PersonEntity: Name: NameFull: Medrano, N. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 09 Text: 9/1/2011 Type: published Y: 2011 Identifiers: – Type: issn-print Value: 00135194 Numbering: – Type: volume Value: 47 – Type: issue Value: 18 Titles: – TitleFull: Electronics Letters (Institution of Engineering & Technology) Type: main |
| ResultId | 1 |