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Nanometer-scale electronic and microstructural properties of grain boundaries in Cu(In,Ga)Se2

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Title: Nanometer-scale electronic and microstructural properties of grain boundaries in Cu(In,Ga)Se2
Authors: Sadewasser, S.1 sadewasser@helmholtz-berlin.de, Abou-Ras, D.1, Azulay, D.2, Baier, R.1, Balberg, I.2, Cahen, D.3, Cohen, S.3, Gartsman, K.3, Ganesan, K.3, Kavalakkatt, J.1, Li, W.3, Millo, O.2, Rissom, Th.1, Rosenwaks, Y.4, Schock, H.-W.1, Schwarzman, A.4, Unold, T.1
Source: Thin Solid Films. Aug2011, Vol. 519 Issue 21, p7341-7346. 6p.
Subjects: Electronic structure, Microstructure, Crystal grain boundaries, Electron backscattering, Atomic force microscopy, Temperature effect, Chalcopyrite crystals, Solar cells, Thin films, Selenides
Abstract: Abstract: Despite many recent research efforts, the influence of grain boundaries (GBs) on device properties of CuIn1−xGaxSe2 solar cells is still not fully understood Here, we present a microscopic approach to characterizing GBs in polycrystalline CuIn1−xGaxSe2 films with x=0.33. On samples from the same deposition process we applied methods giving complementary information, i.e., electron backscatter diffraction (EBSD), electron-beam induced current measurements (EBIC), conductive atomic force microscopy (c-AFM), variable-temperature Kelvin probe force microscopy (KPFM), and scanning capacitance microscopy (SCM). By combining EBIC with EBSD, we find a decrease in charge-carrier collection for non-∑3 GBs, while ∑3 GBs exhibit no variation with respect to grain interiors. In contrast, a higher conductance of GBs compared to grain interiors was found by c-AFM at low bias and under illumination. By KPFM, we directly measured the band bending at GBs, finding a variation from −80 up to +115mV. Depletion and even inversion at GBs was confirmed by SCM. We comparatively discuss the apparent differences between the results obtained by various microscopic techniques. [Copyright &y& Elsevier]
Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 65119775
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Nanometer-scale electronic and microstructural properties of grain boundaries in Cu(In,Ga)Se<subscript>2</subscript>
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  Data: <searchLink fieldCode="AR" term="%22Sadewasser%2C+S%2E%22">Sadewasser, S.</searchLink><relatesTo>1</relatesTo><i> sadewasser@helmholtz-berlin.de</i><br /><searchLink fieldCode="AR" term="%22Abou-Ras%2C+D%2E%22">Abou-Ras, D.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Azulay%2C+D%2E%22">Azulay, D.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Baier%2C+R%2E%22">Baier, R.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Balberg%2C+I%2E%22">Balberg, I.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Cahen%2C+D%2E%22">Cahen, D.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Cohen%2C+S%2E%22">Cohen, S.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Gartsman%2C+K%2E%22">Gartsman, K.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Ganesan%2C+K%2E%22">Ganesan, K.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Kavalakkatt%2C+J%2E%22">Kavalakkatt, J.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Li%2C+W%2E%22">Li, W.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Millo%2C+O%2E%22">Millo, O.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Rissom%2C+Th%2E%22">Rissom, Th.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Rosenwaks%2C+Y%2E%22">Rosenwaks, Y.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AR" term="%22Schock%2C+H%2E-W%2E%22">Schock, H.-W.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Schwarzman%2C+A%2E%22">Schwarzman, A.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AR" term="%22Unold%2C+T%2E%22">Unold, T.</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Thin+Solid+Films%22">Thin Solid Films</searchLink>. Aug2011, Vol. 519 Issue 21, p7341-7346. 6p.
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– Name: Abstract
  Label: Abstract
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  Data: Abstract: Despite many recent research efforts, the influence of grain boundaries (GBs) on device properties of CuIn1−xGaxSe2 solar cells is still not fully understood Here, we present a microscopic approach to characterizing GBs in polycrystalline CuIn1−xGaxSe2 films with x=0.33. On samples from the same deposition process we applied methods giving complementary information, i.e., electron backscatter diffraction (EBSD), electron-beam induced current measurements (EBIC), conductive atomic force microscopy (c-AFM), variable-temperature Kelvin probe force microscopy (KPFM), and scanning capacitance microscopy (SCM). By combining EBIC with EBSD, we find a decrease in charge-carrier collection for non-∑3 GBs, while ∑3 GBs exhibit no variation with respect to grain interiors. In contrast, a higher conductance of GBs compared to grain interiors was found by c-AFM at low bias and under illumination. By KPFM, we directly measured the band bending at GBs, finding a variation from −80 up to +115mV. Depletion and even inversion at GBs was confirmed by SCM. We comparatively discuss the apparent differences between the results obtained by various microscopic techniques. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.tsf.2010.12.227
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        Text: English
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      – SubjectFull: Crystal grain boundaries
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      – SubjectFull: Electron backscattering
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      – SubjectFull: Atomic force microscopy
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      – SubjectFull: Thin films
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      – SubjectFull: Selenides
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