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Transport behavior and mechanism of conduction of simultaneously substituted Y and Fe in La0.7Ba0.3MnO3 perovskite

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Title: Transport behavior and mechanism of conduction of simultaneously substituted Y and Fe in La0.7Ba0.3MnO3 perovskite
Authors: Abdelkhalek, Sonia Ben1, Kallel, Nabil1,2 Nabil.Kallel@fsm.rnu.tn, Kallel, Sami1, Guizouarn, Thierry3, Peña, Octavio3, Oumezzine, Mohamed1
Source: Physica B. Nov2011, Vol. 406 Issue 21, p4060-4067. 8p.
Subjects: Hopping conduction, Electric conductivity, Lanthanum compounds, Yttrium, Iron, Perovskite, Polarons, Semiconductors
Abstract: Abstract: The electrical properties and the mechanism of conduction of the simultaneously substituted La0.7−x Y x Ba0.3Mn1−x Fe x O3 perovskite (0≤x≤0.30) have been studied. The insertion of Y3+ and Fe3+ ions in the parent compound La0.7Ba0.3MnO3 leads to an increase of the resistivity. The undoped sample (x=0) shows a metallic behavior, which can be fitted by the relation ρ(T)=ρ 0+ρ 2T2+ρ 4.5T4.5, indicating the importance of electron–magnon scattering effects in this material. All the other samples (x≥0.10) are semiconductors throughout the studied temperature range (80–290K). Several models have been used to fit their temperature-dependent resistivity: thermal activation, adiabatic nearest-neighbor hopping of small polarons (Holstein theory) and variable range hopping (VRH) models. The fits show that the electronic transport in semiconducting La0.7−x Y x Ba0.3Mn1−x Fe x O3 is well described and dominated by the VRH mechanism, for which the hopping distance (a) grows with increasing Fe3+ doping, thus increasing the average hopping energy W. [Copyright &y& Elsevier]
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Database: Engineering Source
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Abstract:Abstract: The electrical properties and the mechanism of conduction of the simultaneously substituted La0.7−x Y x Ba0.3Mn1−x Fe x O3 perovskite (0≤x≤0.30) have been studied. The insertion of Y3+ and Fe3+ ions in the parent compound La0.7Ba0.3MnO3 leads to an increase of the resistivity. The undoped sample (x=0) shows a metallic behavior, which can be fitted by the relation ρ(T)=ρ 0+ρ 2T2+ρ 4.5T4.5, indicating the importance of electron–magnon scattering effects in this material. All the other samples (x≥0.10) are semiconductors throughout the studied temperature range (80–290K). Several models have been used to fit their temperature-dependent resistivity: thermal activation, adiabatic nearest-neighbor hopping of small polarons (Holstein theory) and variable range hopping (VRH) models. The fits show that the electronic transport in semiconducting La0.7−x Y x Ba0.3Mn1−x Fe x O3 is well described and dominated by the VRH mechanism, for which the hopping distance (a) grows with increasing Fe3+ doping, thus increasing the average hopping energy W. [Copyright &y& Elsevier]
ISSN:09214526
DOI:10.1016/j.physb.2011.07.048