High-aspect ratio microstructures in p-type GaAs and InP created by proton beam writing
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| Title: | High-aspect ratio microstructures in p-type GaAs and InP created by proton beam writing |
|---|---|
| Authors: | Menzel, F. fmenzel@physik.uni-leipzig.de, Spemann, D.1, Butz, T.1 |
| Source: | Nuclear Instruments & Methods in Physics Research Section B. Oct2011, Vol. 269 Issue 20, p2457-2461. 5p. |
| Subjects: | Semiconductors, Microstructure, Proton beams, Etching, Electrochemistry, Irradiation, Crystal growth |
| Abstract: | Abstract: With proton beam writing (PBW) and subsequent electrochemical etching in HF-solution the creation of high-aspect ratio microstructures in p-type InP was performed for the first time. Microstructures with high surface quality as well as high-aspect ratio possessing lateral dimensions down to 1μm were produced. Furthermore, free-standing microstructures were created in this material by a combined irradiation with 2.25MeV protons and 1.125MeV molecules, were the smallest structure dimension of 0.6μm was achieved for a horizontal needle. The creation of nearly perfect circular microstructures indicates that the crystal structure has little effect on the structuring process by PBW in this material. Moreover, the effect of reduced etching inside of closed irradiation patterns, already known from Si and GaAs, was observed also in InP. In further PBW experiments and subsequent electrochemical etching with KOH-solution p-type GaAs microstructures were produced. By using a 4-fold higher etch current density of 45mA/cm2 compared to former PBW experiments on this material the quality of the microstructures could be improved significantly leading to high aspect-ratio structures with minimum lateral sizes of ∼1μm, nearly vertical side walls as well as circular microstructures. This shows the reduced influence of the crystal structure on the shape of the microstructures compared to experiments with lower etch current density where only flat microstructures with inclined side walls determined by the crystal structure could be created. [Copyright &y& Elsevier] |
| Copyright of Nuclear Instruments & Methods in Physics Research Section B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: High-aspect ratio microstructures in p-type GaAs and InP created by proton beam writing – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Menzel%2C+F%2E%22">Menzel, F.</searchLink><i> fmenzel@physik.uni-leipzig.de</i><br /><searchLink fieldCode="AR" term="%22Spemann%2C+D%2E%22">Spemann, D.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Butz%2C+T%2E%22">Butz, T.</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Nuclear+Instruments+%26+Methods+in+Physics+Research+Section+B%22">Nuclear Instruments & Methods in Physics Research Section B</searchLink>. Oct2011, Vol. 269 Issue 20, p2457-2461. 5p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Semiconductors%22">Semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Microstructure%22">Microstructure</searchLink><br /><searchLink fieldCode="DE" term="%22Proton+beams%22">Proton beams</searchLink><br /><searchLink fieldCode="DE" term="%22Etching%22">Etching</searchLink><br /><searchLink fieldCode="DE" term="%22Electrochemistry%22">Electrochemistry</searchLink><br /><searchLink fieldCode="DE" term="%22Irradiation%22">Irradiation</searchLink><br /><searchLink fieldCode="DE" term="%22Crystal+growth%22">Crystal growth</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Abstract: With proton beam writing (PBW) and subsequent electrochemical etching in HF-solution the creation of high-aspect ratio microstructures in p-type InP was performed for the first time. Microstructures with high surface quality as well as high-aspect ratio possessing lateral dimensions down to 1μm were produced. Furthermore, free-standing microstructures were created in this material by a combined irradiation with 2.25MeV protons and 1.125MeV molecules, were the smallest structure dimension of 0.6μm was achieved for a horizontal needle. The creation of nearly perfect circular microstructures indicates that the crystal structure has little effect on the structuring process by PBW in this material. Moreover, the effect of reduced etching inside of closed irradiation patterns, already known from Si and GaAs, was observed also in InP. In further PBW experiments and subsequent electrochemical etching with KOH-solution p-type GaAs microstructures were produced. By using a 4-fold higher etch current density of 45mA/cm2 compared to former PBW experiments on this material the quality of the microstructures could be improved significantly leading to high aspect-ratio structures with minimum lateral sizes of ∼1μm, nearly vertical side walls as well as circular microstructures. This shows the reduced influence of the crystal structure on the shape of the microstructures compared to experiments with lower etch current density where only flat microstructures with inclined side walls determined by the crystal structure could be created. [Copyright &y& Elsevier] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Nuclear Instruments & Methods in Physics Research Section B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.nimb.2011.02.061 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 5 StartPage: 2457 Subjects: – SubjectFull: Semiconductors Type: general – SubjectFull: Microstructure Type: general – SubjectFull: Proton beams Type: general – SubjectFull: Etching Type: general – SubjectFull: Electrochemistry Type: general – SubjectFull: Irradiation Type: general – SubjectFull: Crystal growth Type: general Titles: – TitleFull: High-aspect ratio microstructures in p-type GaAs and InP created by proton beam writing Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Menzel, F. – PersonEntity: Name: NameFull: Spemann, D. – PersonEntity: Name: NameFull: Butz, T. IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 10 Text: Oct2011 Type: published Y: 2011 Identifiers: – Type: issn-print Value: 0168583X Numbering: – Type: volume Value: 269 – Type: issue Value: 20 Titles: – TitleFull: Nuclear Instruments & Methods in Physics Research Section B Type: main |
| ResultId | 1 |
