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Parameters of the energy spectrum for holes in CuInSe2.

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Title: Parameters of the energy spectrum for holes in CuInSe2.
Authors: Gorley, P. M.1, Prokopenko, I. V.2, Galochkina, O. O.1, Horley, P. P.1,3, Vorobiev, Yu. V.4, González-Hernández, J.5
Source: Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009, Vol. 12 Issue 3, p302-308. 7p.
Subjects: Parameter estimation, Copper alloys, Indium selenide, Dispersion relations, Metal crystals, Mathematical models, Temperature effect
Abstract: This paper reports the coefficients CA,B for the k-linear term in dispersion relation E(k) for holes of the upper valence bands Due to image rights restrictions, multiple line equation(s) cannot be graphically displayed. and Due to image rights restrictions, multiple line equation(s) cannot be graphically displayed. in p-CuInSe2 crystals. We also obtained the tensor components for the carrier effective masses Due to image rights restrictions, multiple line equation(s) cannot be graphically displayed. in all three valence sub-bands of the model semiconductor. It was shown that the energy spectrum parameters for holes in CuInSe2 allow successful explanation for the anisotropy of tensor components describing the interband light absorption coefficient and the published data for the temperature variation of the Hall coefficient, total Hall mobility and thermal voltage within the temperature range 100 K ≤ T ≤ 350 K. [ABSTRACT FROM AUTHOR]
Copyright of Semiconductor Physics, Quantum Electronics & Optoelectronics is the property of V. Lashkaryov Institute of Semiconductor Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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Header DbId: egs
DbLabel: Engineering Source
An: 69669376
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PubType: Academic Journal
PubTypeId: academicJournal
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Parameters of the energy spectrum for holes in CuInSe<subscript>2</subscript>.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Gorley%2C+P%2E+M%2E%22">Gorley, P. M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Prokopenko%2C+I%2E+V%2E%22">Prokopenko, I. V.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Galochkina%2C+O%2E+O%2E%22">Galochkina, O. O.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Horley%2C+P%2E+P%2E%22">Horley, P. P.</searchLink><relatesTo>1,3</relatesTo><br /><searchLink fieldCode="AR" term="%22Vorobiev%2C+Yu%2E+V%2E%22">Vorobiev, Yu. V.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AR" term="%22González-Hernández%2C+J%2E%22">González-Hernández, J.</searchLink><relatesTo>5</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Semiconductor+Physics%2C+Quantum+Electronics+%26+Optoelectronics%22">Semiconductor Physics, Quantum Electronics & Optoelectronics</searchLink>. 2009, Vol. 12 Issue 3, p302-308. 7p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Parameter+estimation%22">Parameter estimation</searchLink><br /><searchLink fieldCode="DE" term="%22Copper+alloys%22">Copper alloys</searchLink><br /><searchLink fieldCode="DE" term="%22Indium+selenide%22">Indium selenide</searchLink><br /><searchLink fieldCode="DE" term="%22Dispersion+relations%22">Dispersion relations</searchLink><br /><searchLink fieldCode="DE" term="%22Metal+crystals%22">Metal crystals</searchLink><br /><searchLink fieldCode="DE" term="%22Mathematical+models%22">Mathematical models</searchLink><br /><searchLink fieldCode="DE" term="%22Temperature+effect%22">Temperature effect</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: This paper reports the coefficients CA,B for the k-linear term in dispersion relation E(k) for holes of the upper valence bands Due to image rights restrictions, multiple line equation(s) cannot be graphically displayed. and Due to image rights restrictions, multiple line equation(s) cannot be graphically displayed. in p-CuInSe2 crystals. We also obtained the tensor components for the carrier effective masses Due to image rights restrictions, multiple line equation(s) cannot be graphically displayed. in all three valence sub-bands of the model semiconductor. It was shown that the energy spectrum parameters for holes in CuInSe2 allow successful explanation for the anisotropy of tensor components describing the interband light absorption coefficient and the published data for the temperature variation of the Hall coefficient, total Hall mobility and thermal voltage within the temperature range 100 K ≤ T ≤ 350 K. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Semiconductor Physics, Quantum Electronics & Optoelectronics is the property of V. Lashkaryov Institute of Semiconductor Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 7
        StartPage: 302
    Subjects:
      – SubjectFull: Parameter estimation
        Type: general
      – SubjectFull: Copper alloys
        Type: general
      – SubjectFull: Indium selenide
        Type: general
      – SubjectFull: Dispersion relations
        Type: general
      – SubjectFull: Metal crystals
        Type: general
      – SubjectFull: Mathematical models
        Type: general
      – SubjectFull: Temperature effect
        Type: general
    Titles:
      – TitleFull: Parameters of the energy spectrum for holes in CuInSe2.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Gorley, P. M.
      – PersonEntity:
          Name:
            NameFull: Prokopenko, I. V.
      – PersonEntity:
          Name:
            NameFull: Galochkina, O. O.
      – PersonEntity:
          Name:
            NameFull: Horley, P. P.
      – PersonEntity:
          Name:
            NameFull: Vorobiev, Yu. V.
      – PersonEntity:
          Name:
            NameFull: González-Hernández, J.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 07
              Text: 2009
              Type: published
              Y: 2009
          Identifiers:
            – Type: issn-print
              Value: 15608034
          Numbering:
            – Type: volume
              Value: 12
            – Type: issue
              Value: 3
          Titles:
            – TitleFull: Semiconductor Physics, Quantum Electronics & Optoelectronics
              Type: main
ResultId 1