View in EDS

Enhancements in specimen preparation of Cu(In,Ga)(S,Se)2 thin films

Saved in:

Bibliographic Details
Title:	Enhancements in specimen preparation of Cu(In,Ga)(S,Se)2 thin films
Authors:	Abou-Ras, D.¹ daniel.abou-ras@helmholtz-berlin.de, Marsen, B.¹, Rissom, T.¹, Frost, F.², Schulz, H.³, Bauer, F.⁴, Efimova, V.⁵, Hoffmann, V.⁵, Eicke, A.⁶
Source:	Micron. Feb2012, Vol. 43 Issue 2/3, p470-474. 5p.
Subjects:	Metallic films, Chemical sample preparation, Thin films, Ion bombardment, Electron backscattering, Scanning electron microscopy, Microstructure
Abstract:	Abstract: When producing slices from Cu(In,Ga)(S,Se)2 thin films for solar cells by use of a focused ion beam (FIB), agglomerates form on the Cu(In,Ga)(S,Se)2 surfaces, which deteriorate substantially the imaging and analysis in scanning electron microscopy. Similar problems are also experienced when depth-profiling Cu(In,Ga)(S,Se)2 thin films by means of glow-discharge or secondary ion mass spectrometry. The present work shows that the agglomerates are composed of (mainly) Cu, and that their formation may be impeded considerably by either cooling of the sample or by use of reactive gases during the ion-beam sputtering. The introduction of XeF2 during FIB slicing resulted in excellent images, in which the microstructures of most layers in the Cu(In,Ga)(S,Se)2 thin film stack are visible, including the microstructure of the 20nm thin MoSe2 layer. Acquisition of high-quality two-dimensional and also three-dimensional electron backscatter diffraction data was possible. The present work gives a basis for enhanced SEM imaging and analysis not only in the case of Cu(In,Ga)(S,Se)2 thin films but also when dealing with further material systems exhibiting similar formations of agglomerates. [Copyright &y& Elsevier]
	Copyright of Micron is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database:	Engineering Source

Description
Abstract:	Abstract: When producing slices from Cu(In,Ga)(S,Se)2 thin films for solar cells by use of a focused ion beam (FIB), agglomerates form on the Cu(In,Ga)(S,Se)2 surfaces, which deteriorate substantially the imaging and analysis in scanning electron microscopy. Similar problems are also experienced when depth-profiling Cu(In,Ga)(S,Se)2 thin films by means of glow-discharge or secondary ion mass spectrometry. The present work shows that the agglomerates are composed of (mainly) Cu, and that their formation may be impeded considerably by either cooling of the sample or by use of reactive gases during the ion-beam sputtering. The introduction of XeF2 during FIB slicing resulted in excellent images, in which the microstructures of most layers in the Cu(In,Ga)(S,Se)2 thin film stack are visible, including the microstructure of the 20nm thin MoSe2 layer. Acquisition of high-quality two-dimensional and also three-dimensional electron backscatter diffraction data was possible. The present work gives a basis for enhanced SEM imaging and analysis not only in the case of Cu(In,Ga)(S,Se)2 thin films but also when dealing with further material systems exhibiting similar formations of agglomerates. [Copyright &y& Elsevier]
ISSN:	09684328
DOI:	10.1016/j.micron.2011.11.004