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Effect of Stress-Induced Degradation in LDMOS \1/f Noise Characteristics.

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Title: Effect of Stress-Induced Degradation in LDMOS \1/f Noise Characteristics.
Authors: Mahmud, M. I.1, Celik-Butler, Z.2, Hao, P.3, Srinivasan, P.3, Hou, F.3, Amey, B. L.3, Pendharkar, S.3
Source: IEEE Electron Device Letters. Jan2012, Vol. 33 Issue 1, p107-109. 3p.
Subjects: Electronic noise, Strains & stresses (Mechanics), Metal oxide semiconductors, Surfaces (Technology), Radio frequency, Silica, Interfaces (Physical sciences), High voltages, Electric resistance
Abstract: Low-frequency noise in double reduced-surface-field lateral-double-diffused-MOS devices has been measured, and the effect of dc stressing is analyzed. The noise components contributing from the extended drain regions under the gate and field oxides were differentiated from the channel noise by a series of experimental and analytical techniques. The effect of voltage stressing on each noise component was investigated. Trapped-charge carrier fluctuations due to \Si/SiO2 interface traps in the overlap region in the extended drain as well as in the channel were found to be the dominant source of noise. The bulk resistance fluctuations in the extended drain region under the field oxide were found to be insignificant. High-voltage stressing caused an increase in the interface traps, thus increasing both the extended drain overlap resistance and the noise. [ABSTRACT FROM PUBLISHER]
Copyright of IEEE Electron Device Letters is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 70575447
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  Data: Effect of Stress-Induced Degradation in LDMOS \1/f Noise Characteristics.
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>. Jan2012, Vol. 33 Issue 1, p107-109. 3p.
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  Data: <searchLink fieldCode="DE" term="%22Electronic+noise%22">Electronic noise</searchLink><br /><searchLink fieldCode="DE" term="%22Strains+%26+stresses+%28Mechanics%29%22">Strains & stresses (Mechanics)</searchLink><br /><searchLink fieldCode="DE" term="%22Metal+oxide+semiconductors%22">Metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Surfaces+%28Technology%29%22">Surfaces (Technology)</searchLink><br /><searchLink fieldCode="DE" term="%22Radio+frequency%22">Radio frequency</searchLink><br /><searchLink fieldCode="DE" term="%22Silica%22">Silica</searchLink><br /><searchLink fieldCode="DE" term="%22Interfaces+%28Physical+sciences%29%22">Interfaces (Physical sciences)</searchLink><br /><searchLink fieldCode="DE" term="%22High+voltages%22">High voltages</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+resistance%22">Electric resistance</searchLink>
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  Data: Low-frequency noise in double reduced-surface-field lateral-double-diffused-MOS devices has been measured, and the effect of dc stressing is analyzed. The noise components contributing from the extended drain regions under the gate and field oxides were differentiated from the channel noise by a series of experimental and analytical techniques. The effect of voltage stressing on each noise component was investigated. Trapped-charge carrier fluctuations due to \Si/SiO2 interface traps in the overlap region in the extended drain as well as in the channel were found to be the dominant source of noise. The bulk resistance fluctuations in the extended drain region under the field oxide were found to be insignificant. High-voltage stressing caused an increase in the interface traps, thus increasing both the extended drain overlap resistance and the noise. [ABSTRACT FROM PUBLISHER]
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  Group: Ab
  Data: <i>Copyright of IEEE Electron Device Letters is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1109/LED.2011.2171473
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        Text: English
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      – SubjectFull: Electronic noise
        Type: general
      – SubjectFull: Strains & stresses (Mechanics)
        Type: general
      – SubjectFull: Metal oxide semiconductors
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      – SubjectFull: Surfaces (Technology)
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      – SubjectFull: Radio frequency
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      – SubjectFull: Silica
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      – SubjectFull: Interfaces (Physical sciences)
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      – SubjectFull: High voltages
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      – SubjectFull: Electric resistance
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      – TitleFull: Effect of Stress-Induced Degradation in LDMOS \1/f Noise Characteristics.
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              Text: Jan2012
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              Y: 2012
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