Effect of Stress-Induced Degradation in LDMOS \1/f Noise Characteristics.
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| Title: | Effect of Stress-Induced Degradation in LDMOS \1/f Noise Characteristics. |
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| Authors: | Mahmud, M. I.1, Celik-Butler, Z.2, Hao, P.3, Srinivasan, P.3, Hou, F.3, Amey, B. L.3, Pendharkar, S.3 |
| Source: | IEEE Electron Device Letters. Jan2012, Vol. 33 Issue 1, p107-109. 3p. |
| Subjects: | Electronic noise, Strains & stresses (Mechanics), Metal oxide semiconductors, Surfaces (Technology), Radio frequency, Silica, Interfaces (Physical sciences), High voltages, Electric resistance |
| Abstract: | Low-frequency noise in double reduced-surface-field lateral-double-diffused-MOS devices has been measured, and the effect of dc stressing is analyzed. The noise components contributing from the extended drain regions under the gate and field oxides were differentiated from the channel noise by a series of experimental and analytical techniques. The effect of voltage stressing on each noise component was investigated. Trapped-charge carrier fluctuations due to \Si/SiO2 interface traps in the overlap region in the extended drain as well as in the channel were found to be the dominant source of noise. The bulk resistance fluctuations in the extended drain region under the field oxide were found to be insignificant. High-voltage stressing caused an increase in the interface traps, thus increasing both the extended drain overlap resistance and the noise. [ABSTRACT FROM PUBLISHER] |
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| Database: | Engineering Source |
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