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Creation of Individual Defects at Extremely High Proton Fluences in Carbon Nanotube p-n Diodes.

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Title: Creation of Individual Defects at Extremely High Proton Fluences in Carbon Nanotube p-n Diodes.
Authors: Comfort, Everett S.1, Fishman, Matthew, Malapanis, Argyrios1, Hughes, Harold2, McMarr, Patrick2, Cress, Cory D.2, Bakhru, Hassaram1, Lee, Ji Ung1
Source: IEEE Transactions on Nuclear Science. 12/1/2011 Part 1 Part 1, Vol. 58 Issue 6, p2898-2903. 6p.
Subjects: Protons, Carbon nanotubes, Diodes, Radiation, Heavy water reactors, Oscillations, Xenon, Eigenvalues
Abstract: We show that carbon nanotubes are robust under high H2^{+} ion fluences. We draw this conclusion by analyzing radiation-induced defects in reconfigurable single-walled carbon nanotube p-n diodes with partially suspended nanotubes. Our analysis show that any defects created through radiation is likely the result of interactions between the nanotube and the substrate, whereas the suspended region of the nanotube remains undamaged. In addition, we show that key features in the diode characteristics can be explained by a single radiation-induced defect that enhances the minority carrier generation rate of only one carrier type. [ABSTRACT FROM PUBLISHER]
Copyright of IEEE Transactions on Nuclear Science is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 70577672
AccessLevel: 6
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PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Creation of Individual Defects at Extremely High Proton Fluences in Carbon Nanotube p-n Diodes.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Comfort%2C+Everett+S%2E%22">Comfort, Everett S.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Fishman%2C+Matthew%22">Fishman, Matthew</searchLink><br /><searchLink fieldCode="AR" term="%22Malapanis%2C+Argyrios%22">Malapanis, Argyrios</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Hughes%2C+Harold%22">Hughes, Harold</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22McMarr%2C+Patrick%22">McMarr, Patrick</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Cress%2C+Cory+D%2E%22">Cress, Cory D.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Bakhru%2C+Hassaram%22">Bakhru, Hassaram</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Lee%2C+Ji+Ung%22">Lee, Ji Ung</searchLink><relatesTo>1</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Nuclear+Science%22">IEEE Transactions on Nuclear Science</searchLink>. 12/1/2011 Part 1 Part 1, Vol. 58 Issue 6, p2898-2903. 6p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Protons%22">Protons</searchLink><br /><searchLink fieldCode="DE" term="%22Carbon+nanotubes%22">Carbon nanotubes</searchLink><br /><searchLink fieldCode="DE" term="%22Diodes%22">Diodes</searchLink><br /><searchLink fieldCode="DE" term="%22Radiation%22">Radiation</searchLink><br /><searchLink fieldCode="DE" term="%22Heavy+water+reactors%22">Heavy water reactors</searchLink><br /><searchLink fieldCode="DE" term="%22Oscillations%22">Oscillations</searchLink><br /><searchLink fieldCode="DE" term="%22Xenon%22">Xenon</searchLink><br /><searchLink fieldCode="DE" term="%22Eigenvalues%22">Eigenvalues</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: We show that carbon nanotubes are robust under high H2^{+} ion fluences. We draw this conclusion by analyzing radiation-induced defects in reconfigurable single-walled carbon nanotube p-n diodes with partially suspended nanotubes. Our analysis show that any defects created through radiation is likely the result of interactions between the nanotube and the substrate, whereas the suspended region of the nanotube remains undamaged. In addition, we show that key features in the diode characteristics can be explained by a single radiation-induced defect that enhances the minority carrier generation rate of only one carrier type. [ABSTRACT FROM PUBLISHER]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of IEEE Transactions on Nuclear Science is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1109/TNS.2011.2170708
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 6
        StartPage: 2898
    Subjects:
      – SubjectFull: Protons
        Type: general
      – SubjectFull: Carbon nanotubes
        Type: general
      – SubjectFull: Diodes
        Type: general
      – SubjectFull: Radiation
        Type: general
      – SubjectFull: Heavy water reactors
        Type: general
      – SubjectFull: Oscillations
        Type: general
      – SubjectFull: Xenon
        Type: general
      – SubjectFull: Eigenvalues
        Type: general
    Titles:
      – TitleFull: Creation of Individual Defects at Extremely High Proton Fluences in Carbon Nanotube p-n Diodes.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Comfort, Everett S.
      – PersonEntity:
          Name:
            NameFull: Fishman, Matthew
      – PersonEntity:
          Name:
            NameFull: Malapanis, Argyrios
      – PersonEntity:
          Name:
            NameFull: Hughes, Harold
      – PersonEntity:
          Name:
            NameFull: McMarr, Patrick
      – PersonEntity:
          Name:
            NameFull: Cress, Cory D.
      – PersonEntity:
          Name:
            NameFull: Bakhru, Hassaram
      – PersonEntity:
          Name:
            NameFull: Lee, Ji Ung
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 12
              Text: 12/1/2011 Part 1 Part 1
              Type: published
              Y: 2011
          Identifiers:
            – Type: issn-print
              Value: 00189499
          Numbering:
            – Type: volume
              Value: 58
            – Type: issue
              Value: 6
          Titles:
            – TitleFull: IEEE Transactions on Nuclear Science
              Type: main
ResultId 1