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Improvement in performance and reliability with CF4 plasma pretreatment on the buffer oxide layer for low-temperature polysilicon thin-film transistor.

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Title: Improvement in performance and reliability with CF4 plasma pretreatment on the buffer oxide layer for low-temperature polysilicon thin-film transistor.
Authors: Ching-Lin Fan1,2 clfan@mail.ntust.edu.tw, Yi-Yan Lin1, Chun-Chieh Yang1
Source: Semiconductor Science & Technology. Mar2012, Vol. 27 Issue 3, p035005-035005. 1p. 1 Diagram, 2 Charts, 6 Graphs.
Subjects: Silicon, Thin film transistors, Low temperatures, Plasma gases, Oxides, Fluorine, Threshold voltage, Field-effect transistors
Abstract: This study applies CF4 plasma pretreatment to a buffer oxide layer to improve the performance of low-temperature polysilicon thin-film transistors (LTPS TFTs). Results show that the fluorine atoms piled up at the interface between the bulk channel and buffer oxide layer and accumulated in the bulk channel. The reduction of the trap states density by fluorine passivation can improve the electrical characteristics of the LTPS TFTs. It is found that the threshold voltage reduced from 4.32 to 3.03 V and the field-effect mobility increased from 29.71 to 45.65 cm2 V[?]1 S[?]1. In addition, the on current degradation and threshold voltage shift after stressing were significantly improved about 31% and 70%, respectively. We believe that the proposed CF4 plasma pretreatment on the buffer oxide layer can passivate the trap states and avoid the plasma induced damage on the polysilicon channel surface, resulting in the improvement in performance and reliability for LTPS-TFT mass production application on AMOLED displays with critical reliability requirement. [ABSTRACT FROM AUTHOR]
Copyright of Semiconductor Science & Technology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 71547084
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Improvement in performance and reliability with CF<subscript>4</subscript> plasma pretreatment on the buffer oxide layer for low-temperature polysilicon thin-film transistor.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Ching-Lin+Fan%22">Ching-Lin Fan</searchLink><relatesTo>1,2</relatesTo><i> clfan@mail.ntust.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Yi-Yan+Lin%22">Yi-Yan Lin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Chun-Chieh+Yang%22">Chun-Chieh Yang</searchLink><relatesTo>1</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Semiconductor+Science+%26+Technology%22">Semiconductor Science & Technology</searchLink>. Mar2012, Vol. 27 Issue 3, p035005-035005. 1p. 1 Diagram, 2 Charts, 6 Graphs.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+film+transistors%22">Thin film transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Low+temperatures%22">Low temperatures</searchLink><br /><searchLink fieldCode="DE" term="%22Plasma+gases%22">Plasma gases</searchLink><br /><searchLink fieldCode="DE" term="%22Oxides%22">Oxides</searchLink><br /><searchLink fieldCode="DE" term="%22Fluorine%22">Fluorine</searchLink><br /><searchLink fieldCode="DE" term="%22Threshold+voltage%22">Threshold voltage</searchLink><br /><searchLink fieldCode="DE" term="%22Field-effect+transistors%22">Field-effect transistors</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: This study applies CF4 plasma pretreatment to a buffer oxide layer to improve the performance of low-temperature polysilicon thin-film transistors (LTPS TFTs). Results show that the fluorine atoms piled up at the interface between the bulk channel and buffer oxide layer and accumulated in the bulk channel. The reduction of the trap states density by fluorine passivation can improve the electrical characteristics of the LTPS TFTs. It is found that the threshold voltage reduced from 4.32 to 3.03 V and the field-effect mobility increased from 29.71 to 45.65 cm2 V[?]1 S[?]1. In addition, the on current degradation and threshold voltage shift after stressing were significantly improved about 31% and 70%, respectively. We believe that the proposed CF4 plasma pretreatment on the buffer oxide layer can passivate the trap states and avoid the plasma induced damage on the polysilicon channel surface, resulting in the improvement in performance and reliability for LTPS-TFT mass production application on AMOLED displays with critical reliability requirement. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Semiconductor Science & Technology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1088/0268-1242/27/3/035005
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 1
        StartPage: 035005
    Subjects:
      – SubjectFull: Silicon
        Type: general
      – SubjectFull: Thin film transistors
        Type: general
      – SubjectFull: Low temperatures
        Type: general
      – SubjectFull: Plasma gases
        Type: general
      – SubjectFull: Oxides
        Type: general
      – SubjectFull: Fluorine
        Type: general
      – SubjectFull: Threshold voltage
        Type: general
      – SubjectFull: Field-effect transistors
        Type: general
    Titles:
      – TitleFull: Improvement in performance and reliability with CF4 plasma pretreatment on the buffer oxide layer for low-temperature polysilicon thin-film transistor.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Ching-Lin Fan
      – PersonEntity:
          Name:
            NameFull: Yi-Yan Lin
      – PersonEntity:
          Name:
            NameFull: Chun-Chieh Yang
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 03
              Text: Mar2012
              Type: published
              Y: 2012
          Identifiers:
            – Type: issn-print
              Value: 02681242
          Numbering:
            – Type: volume
              Value: 27
            – Type: issue
              Value: 3
          Titles:
            – TitleFull: Semiconductor Science & Technology
              Type: main
ResultId 1