Improvement in performance and reliability with CF4 plasma pretreatment on the buffer oxide layer for low-temperature polysilicon thin-film transistor.
Saved in:
| Title: | Improvement in performance and reliability with CF |
|---|---|
| Authors: | Ching-Lin Fan1,2 clfan@mail.ntust.edu.tw, Yi-Yan Lin1, Chun-Chieh Yang1 |
| Source: | Semiconductor Science & Technology. Mar2012, Vol. 27 Issue 3, p035005-035005. 1p. 1 Diagram, 2 Charts, 6 Graphs. |
| Subjects: | Silicon, Thin film transistors, Low temperatures, Plasma gases, Oxides, Fluorine, Threshold voltage, Field-effect transistors |
| Abstract: | This study applies CF4 plasma pretreatment to a buffer oxide layer to improve the performance of low-temperature polysilicon thin-film transistors (LTPS TFTs). Results show that the fluorine atoms piled up at the interface between the bulk channel and buffer oxide layer and accumulated in the bulk channel. The reduction of the trap states density by fluorine passivation can improve the electrical characteristics of the LTPS TFTs. It is found that the threshold voltage reduced from 4.32 to 3.03 V and the field-effect mobility increased from 29.71 to 45.65 cm2 V[?]1 S[?]1. In addition, the on current degradation and threshold voltage shift after stressing were significantly improved about 31% and 70%, respectively. We believe that the proposed CF4 plasma pretreatment on the buffer oxide layer can passivate the trap states and avoid the plasma induced damage on the polysilicon channel surface, resulting in the improvement in performance and reliability for LTPS-TFT mass production application on AMOLED displays with critical reliability requirement. [ABSTRACT FROM AUTHOR] |
| Copyright of Semiconductor Science & Technology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
Be the first to leave a comment!
