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Low Temperature Growth of Aligned Carbon Nanotubes in Large Area.

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Title: Low Temperature Growth of Aligned Carbon Nanotubes in Large Area.
Authors: Lin, P. H., Lin, C. R., Chen, K. H., Chen, L. C.
Source: International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics. 3/20/2002, Vol. 16 Issue 6/7, p853. 7p.
Subjects: Nanotubes, Carbon compounds, Plasma-enhanced chemical vapor deposition
Abstract: We have synthesized well-aligned, uniform carbon nanotubes (CNTs) in large area at low temperature of 500 °C using microwave plasma- enhanced chemical vapor deposition on silicon and Coming glass 7059. This is a two-step process in that ion beam sputtering deposition was used to deposit iron catalyst thin films and followed by hydrogen plasma pretreatment to form nano-size Fe particles before the CNTs growth at the second step. The thickness of Fe catalyst thin film was found to be the most important factor in the low temperature CNTs growth process. Systematic control of the length, diameter, and alignment of the CNTs has been achieved by changing the deposition parameters such us microwave power, pressure, temperature and the thickness of Fe catalyst. High resolution SEM and TEM were used to characterize the morphology and structure of the nanotubes. Field emission measurement showed a low mm on field (6.2 V/ m) and high emission current density (0.1 mA/cm² at 9 V/ m) for the films grown at low temperature of 500 °C. [ABSTRACT FROM AUTHOR]
Copyright of International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics is the property of World Scientific Publishing Company and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
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PubType: Academic Journal
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  Data: We have synthesized well-aligned, uniform carbon nanotubes (CNTs) in large area at low temperature of 500 °C using microwave plasma- enhanced chemical vapor deposition on silicon and Coming glass 7059. This is a two-step process in that ion beam sputtering deposition was used to deposit iron catalyst thin films and followed by hydrogen plasma pretreatment to form nano-size Fe particles before the CNTs growth at the second step. The thickness of Fe catalyst thin film was found to be the most important factor in the low temperature CNTs growth process. Systematic control of the length, diameter, and alignment of the CNTs has been achieved by changing the deposition parameters such us microwave power, pressure, temperature and the thickness of Fe catalyst. High resolution SEM and TEM were used to characterize the morphology and structure of the nanotubes. Field emission measurement showed a low mm on field (6.2 V/ m) and high emission current density (0.1 mA/cm² at 9 V/ m) for the films grown at low temperature of 500 °C. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics is the property of World Scientific Publishing Company and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – SubjectFull: Plasma-enhanced chemical vapor deposition
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              Text: 3/20/2002
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              Y: 2002
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