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A Model of High- and Low-Temperature Phosphorus Diffusion in Silicon by a Dual Pair Mechanism.

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Title: A Model of High- and Low-Temperature Phosphorus Diffusion in Silicon by a Dual Pair Mechanism.
Authors: Aleksandrov, O. V.
Source: Semiconductors. Nov2001, Vol. 35 Issue 11, p1231. 11p.
Subjects: Semiconductor diffusion, Phosphorus, Thermodynamic equilibrium
Abstract: A model of phosphorus diffusion in silicon was developed on the basis of a dual pair mechanism; according to this model, the contribution of the impurity-vacancy (PV) and impurity-self-interstitial (PI) pairs to diffusion is accounted for directly in terms of the phosphorus diffusion coefficient. A violation of thermodynamic equilibrium in relation to native point defects occurs as a result of diffusion of the PI neutral pairs. At the high-temperature diffusion stage, the phosphorus diffusion is described by a single diffusion equation with the diffusion coefficient dependent on both the local and surface phosphorus concentrations; whereas at the next (occurring at lower temperatures) stage, the phosphorus diffusion is described by two diffusion equations for the total concentrations of the components containing phosphorus and self-interstitials. An anomalously high rate of the low-temperature diffusion is ensured by excess self-interstitials accumulated in the doped layer during the preceding high-temperature diffusion. The model makes it possible to quantitatively account for the special features of the phosphorus diffusion in a wide range of the surface concentrations at both the high (900-1100°C) and lower (500-700°C) temperatures. [ABSTRACT FROM AUTHOR]
Copyright of Semiconductors is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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  – Type: pdflink
Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 7292114
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: A Model of High- and Low-Temperature Phosphorus Diffusion in Silicon by a Dual Pair Mechanism.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Aleksandrov%2C+O%2E+V%2E%22">Aleksandrov, O. V.</searchLink>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Semiconductors%22">Semiconductors</searchLink>. Nov2001, Vol. 35 Issue 11, p1231. 11p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Semiconductor+diffusion%22">Semiconductor diffusion</searchLink><br /><searchLink fieldCode="DE" term="%22Phosphorus%22">Phosphorus</searchLink><br /><searchLink fieldCode="DE" term="%22Thermodynamic+equilibrium%22">Thermodynamic equilibrium</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: A model of phosphorus diffusion in silicon was developed on the basis of a dual pair mechanism; according to this model, the contribution of the impurity-vacancy (PV) and impurity-self-interstitial (PI) pairs to diffusion is accounted for directly in terms of the phosphorus diffusion coefficient. A violation of thermodynamic equilibrium in relation to native point defects occurs as a result of diffusion of the PI neutral pairs. At the high-temperature diffusion stage, the phosphorus diffusion is described by a single diffusion equation with the diffusion coefficient dependent on both the local and surface phosphorus concentrations; whereas at the next (occurring at lower temperatures) stage, the phosphorus diffusion is described by two diffusion equations for the total concentrations of the components containing phosphorus and self-interstitials. An anomalously high rate of the low-temperature diffusion is ensured by excess self-interstitials accumulated in the doped layer during the preceding high-temperature diffusion. The model makes it possible to quantitatively account for the special features of the phosphorus diffusion in a wide range of the surface concentrations at both the high (900-1100°C) and lower (500-700°C) temperatures. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Semiconductors is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1134/1.1418063
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 11
        StartPage: 1231
    Subjects:
      – SubjectFull: Semiconductor diffusion
        Type: general
      – SubjectFull: Phosphorus
        Type: general
      – SubjectFull: Thermodynamic equilibrium
        Type: general
    Titles:
      – TitleFull: A Model of High- and Low-Temperature Phosphorus Diffusion in Silicon by a Dual Pair Mechanism.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Aleksandrov, O. V.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 11
              Text: Nov2001
              Type: published
              Y: 2001
          Identifiers:
            – Type: issn-print
              Value: 10637826
          Numbering:
            – Type: volume
              Value: 35
            – Type: issue
              Value: 11
          Titles:
            – TitleFull: Semiconductors
              Type: main
ResultId 1