Degradation Processes in the Aluminum–Silicon System Induced by Pulsed Electric Signals.
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| Title: | Degradation Processes in the Aluminum–Silicon System Induced by Pulsed Electric Signals. |
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| Authors: | Skvortsov, A. A., Orlov, A. M., Salanov, A. A. |
| Source: | Technical Physics Letters. Oct2001, Vol. 27 Issue 10, p834. 4p. |
| Subjects: | Metallizing, Electricity, Aluminum, Silicon |
| Abstract: | Thermal conditions in a metallization layer deposited onto a single crystal silicon substrate were studied during the passage of single electric pulses with a current density of j = (1-8) × 10[sup 10] A/m² and a duration of τ = 50-800 µs. Mechanisms of the irreversible degradation in the aluminum-silicon contact under the pulsed current action are established. The degradation is manifested by the contact melting and the metallization layer fusion. Methods for the identification of these phenomena and determination of the critical current densities j[sub k] are proposed. The critical current density depends on the current pulse duration as described by the relationship j[sub k] ∼ 1/[sup 4]√τ. It is established that the passage of single current pulses with j ≥ 5 × 10[sup 10] A/m² and τ ≥ 200 µs leads to the formation of linear defects in the region of maximum temperature gradient in the test structure. [ABSTRACT FROM AUTHOR] |
| Copyright of Technical Physics Letters is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Items | – Name: Title Label: Title Group: Ti Data: Degradation Processes in the Aluminum–Silicon System Induced by Pulsed Electric Signals. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Skvortsov%2C+A%2E+A%2E%22">Skvortsov, A. A.</searchLink><br /><searchLink fieldCode="AR" term="%22Orlov%2C+A%2E+M%2E%22">Orlov, A. M.</searchLink><br /><searchLink fieldCode="AR" term="%22Salanov%2C+A%2E+A%2E%22">Salanov, A. A.</searchLink> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Technical+Physics+Letters%22">Technical Physics Letters</searchLink>. Oct2001, Vol. 27 Issue 10, p834. 4p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Metallizing%22">Metallizing</searchLink><br /><searchLink fieldCode="DE" term="%22Electricity%22">Electricity</searchLink><br /><searchLink fieldCode="DE" term="%22Aluminum%22">Aluminum</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Thermal conditions in a metallization layer deposited onto a single crystal silicon substrate were studied during the passage of single electric pulses with a current density of j = (1-8) × 10[sup 10] A/m² and a duration of τ = 50-800 µs. Mechanisms of the irreversible degradation in the aluminum-silicon contact under the pulsed current action are established. The degradation is manifested by the contact melting and the metallization layer fusion. Methods for the identification of these phenomena and determination of the critical current densities j[sub k] are proposed. The critical current density depends on the current pulse duration as described by the relationship j[sub k] ∼ 1/[sup 4]√τ. It is established that the passage of single current pulses with j ≥ 5 × 10[sup 10] A/m² and τ ≥ 200 µs leads to the formation of linear defects in the region of maximum temperature gradient in the test structure. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Technical Physics Letters is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1134/1.1414449 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 4 StartPage: 834 Subjects: – SubjectFull: Metallizing Type: general – SubjectFull: Electricity Type: general – SubjectFull: Aluminum Type: general – SubjectFull: Silicon Type: general Titles: – TitleFull: Degradation Processes in the Aluminum–Silicon System Induced by Pulsed Electric Signals. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Skvortsov, A. A. – PersonEntity: Name: NameFull: Orlov, A. M. – PersonEntity: Name: NameFull: Salanov, A. A. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 10 Text: Oct2001 Type: published Y: 2001 Identifiers: – Type: issn-print Value: 10637850 Numbering: – Type: volume Value: 27 – Type: issue Value: 10 Titles: – TitleFull: Technical Physics Letters Type: main |
| ResultId | 1 |
