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A gradual annealing of amorphous sputtered indium tin oxide: Crystalline structure and electrical characteristics

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Title: A gradual annealing of amorphous sputtered indium tin oxide: Crystalline structure and electrical characteristics
Authors: Legeay, G., Castel, X. xavier.castel@univ-rennes1.fr
Source: Thin Solid Films. Mar2012, Vol. 520 Issue 11, p4021-4025. 5p.
Subjects: Amorphous semiconductors, Indium tin oxide, Crystal structure, Annealing of semiconductors, Semiconductor films, Sputtering (Physics), Temperature effect
Abstract: Abstract: Thin films of amorphous indium tin oxide were deposited by soft sputtering. The film was gradually annealed in air at temperatures from 110°C to 150°C. Its structural and electrical properties were monitored in order to get a better understanding of the annealing process. Firstly, carrier density decreases by oxygen intake. Crystallization speeds up at 150°C, with a 2.5 D growth of crystallites. The preferred orientations come from sputtering induced seeds. Then, the carrier density increases again due to tin activation. Meanwhile, the carrier mobility is more damaged by the low temperature annealing in air than by a standard annealing in a reducing atmosphere. Thus, tin oxide segregation is suspected at grain boundaries. [Copyright &y& Elsevier]
Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 73766320
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: A gradual annealing of amorphous sputtered indium tin oxide: Crystalline structure and electrical characteristics
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  Data: <searchLink fieldCode="AR" term="%22Legeay%2C+G%2E%22">Legeay, G.</searchLink><br /><searchLink fieldCode="AR" term="%22Castel%2C+X%2E%22">Castel, X.</searchLink><i> xavier.castel@univ-rennes1.fr</i>
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  Data: <searchLink fieldCode="JN" term="%22Thin+Solid+Films%22">Thin Solid Films</searchLink>. Mar2012, Vol. 520 Issue 11, p4021-4025. 5p.
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  Data: <searchLink fieldCode="DE" term="%22Amorphous+semiconductors%22">Amorphous semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Indium+tin+oxide%22">Indium tin oxide</searchLink><br /><searchLink fieldCode="DE" term="%22Crystal+structure%22">Crystal structure</searchLink><br /><searchLink fieldCode="DE" term="%22Annealing+of+semiconductors%22">Annealing of semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+films%22">Semiconductor films</searchLink><br /><searchLink fieldCode="DE" term="%22Sputtering+%28Physics%29%22">Sputtering (Physics)</searchLink><br /><searchLink fieldCode="DE" term="%22Temperature+effect%22">Temperature effect</searchLink>
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  Label: Abstract
  Group: Ab
  Data: Abstract: Thin films of amorphous indium tin oxide were deposited by soft sputtering. The film was gradually annealed in air at temperatures from 110°C to 150°C. Its structural and electrical properties were monitored in order to get a better understanding of the annealing process. Firstly, carrier density decreases by oxygen intake. Crystallization speeds up at 150°C, with a 2.5 D growth of crystallites. The preferred orientations come from sputtering induced seeds. Then, the carrier density increases again due to tin activation. Meanwhile, the carrier mobility is more damaged by the low temperature annealing in air than by a standard annealing in a reducing atmosphere. Thus, tin oxide segregation is suspected at grain boundaries. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.tsf.2012.01.029
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 4021
    Subjects:
      – SubjectFull: Amorphous semiconductors
        Type: general
      – SubjectFull: Indium tin oxide
        Type: general
      – SubjectFull: Crystal structure
        Type: general
      – SubjectFull: Annealing of semiconductors
        Type: general
      – SubjectFull: Semiconductor films
        Type: general
      – SubjectFull: Sputtering (Physics)
        Type: general
      – SubjectFull: Temperature effect
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              Text: Mar2012
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