Characterization of indium tin oxide films by RF-assisted DC magnetron sputtering

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Title: Characterization of indium tin oxide films by RF-assisted DC magnetron sputtering
Authors: Houng, Boen1 boyen@mail.isu.edu.tw, Wang, Adam1,2
Source: Applied Surface Science. May2012, Vol. 258 Issue 15, p5593-5598. 6p.
Subjects: Indium tin oxide, Thin films, Magnetron sputtering, Engineering design, Polyethylene terephthalate, Momentum (Mechanics), Energy transfer
Abstract: Abstract: A unique design of RF (radio frequency) assisted DC (direct current) sputter was employed to deposit ITO (indium tin oxide) films on PET (polyethylene terephtalate) substrate. Effects of different RF portions of total power and oxygen gas flow on the properties of the films were investigated. It was found that the films became denser as the applied RF portion of the total power increased. This is due to higher momentum energy transfer by impinging ions increasing adatom diffusion on the films. Thus, a larger grained and less porous microstructure was presented in the films deposited at higher RF portions of the total power. However, a rougher surface morphology and minor crystallization was also found in the films prepared at 100% RF power. By wisely adjusting to a 50% RF portion of the total power, the electrical resistivity can reach a minimum value of 5.4×10−4 Ωcm associated with the carrier concentration of 7.0×1020 cm−3 and mobility of 17.4cm2 V−1 s−1, respectively. In addition, the oxygen gas concentration in the sputtering chamber was found to play a key role in determining the quality of the films. As oxygen gas flowed at 2sccm, the electrical resistivity was decreased to 3.9×10−4 Ωcm at a 50% RF portion of the total power. The electrical conduction mechanism, based on the grain boundary scattering, was correlated to the microstructure of the films in terms of grain size. [Copyright &y& Elsevier]
Copyright of Applied Surface Science is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 73964507
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  Data: Characterization of indium tin oxide films by RF-assisted DC magnetron sputtering
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  Data: <searchLink fieldCode="AR" term="%22Houng%2C+Boen%22">Houng, Boen</searchLink><relatesTo>1</relatesTo><i> boyen@mail.isu.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Wang%2C+Adam%22">Wang, Adam</searchLink><relatesTo>1,2</relatesTo>
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  Data: <searchLink fieldCode="DE" term="%22Indium+tin+oxide%22">Indium tin oxide</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Magnetron+sputtering%22">Magnetron sputtering</searchLink><br /><searchLink fieldCode="DE" term="%22Engineering+design%22">Engineering design</searchLink><br /><searchLink fieldCode="DE" term="%22Polyethylene+terephthalate%22">Polyethylene terephthalate</searchLink><br /><searchLink fieldCode="DE" term="%22Momentum+%28Mechanics%29%22">Momentum (Mechanics)</searchLink><br /><searchLink fieldCode="DE" term="%22Energy+transfer%22">Energy transfer</searchLink>
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  Label: Abstract
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  Data: Abstract: A unique design of RF (radio frequency) assisted DC (direct current) sputter was employed to deposit ITO (indium tin oxide) films on PET (polyethylene terephtalate) substrate. Effects of different RF portions of total power and oxygen gas flow on the properties of the films were investigated. It was found that the films became denser as the applied RF portion of the total power increased. This is due to higher momentum energy transfer by impinging ions increasing adatom diffusion on the films. Thus, a larger grained and less porous microstructure was presented in the films deposited at higher RF portions of the total power. However, a rougher surface morphology and minor crystallization was also found in the films prepared at 100% RF power. By wisely adjusting to a 50% RF portion of the total power, the electrical resistivity can reach a minimum value of 5.4×10−4 Ωcm associated with the carrier concentration of 7.0×1020 cm−3 and mobility of 17.4cm2 V−1 s−1, respectively. In addition, the oxygen gas concentration in the sputtering chamber was found to play a key role in determining the quality of the films. As oxygen gas flowed at 2sccm, the electrical resistivity was decreased to 3.9×10−4 Ωcm at a 50% RF portion of the total power. The electrical conduction mechanism, based on the grain boundary scattering, was correlated to the microstructure of the films in terms of grain size. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of Applied Surface Science is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1016/j.apsusc.2012.02.030
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 5593
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      – SubjectFull: Indium tin oxide
        Type: general
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Magnetron sputtering
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      – SubjectFull: Engineering design
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      – SubjectFull: Polyethylene terephthalate
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      – SubjectFull: Momentum (Mechanics)
        Type: general
      – SubjectFull: Energy transfer
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              Text: May2012
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